SCHEMBL20484103

SCHEMBL20484103

C/C(=C\CCNC(=O)Oc1ccc2ccccc2c1-c1c(OC(=O)NCC/C=C(\C)C(=O)O)ccc2cc(I)ccc12)C(=O)O

nearest known ligand 0.53

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
NCEH1 Q6PIU2 5/20 0.44
CES2 O00748 1/20 0.37
SMN1; SMN2 Q16637 2/20 0.34
HPGD P15428 1/20 0.34
NPC1 O15118 1/20 0.34
MAPT P10636 1/20 0.34
RAB9A P51151 1/20 0.34
ALDH1A1 P00352 2/20 0.33
GAA P10253 2/20 0.33
PGR P06401 1/20 0.33
PTGS1 P23219 1/20 0.33
MAPK1 P28482 1/20 0.33
HSD17B10 Q99714 1/20 0.33
KMT2A Q03164 2/20 0.33
MEN1 O00255 1/20 0.33
HTT P42858 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33
GPR55 Q9Y2T6 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20553821 0.95 NCEH1 (0.36) NCEH1CES2SMN1; SMN2
SCHEMBL17825889 0.91 NCEH1 (0.52) NCEH1CES2SMN1; SMN2HPGDNPC1
SCHEMBL20484011 0.89 NCEH1 (0.47) NCEH1CES2SMN1; SMN2HPGDNPC1
SCHEMBL20483934 0.89 NCEH1 (0.44) NCEH1CES2SMN1; SMN2HPGDALDH1A1
SCHEMBL20484009 0.89 NCEH1 (0.44) NCEH1CES2SMN1; SMN2HTTNPSR1
SCHEMBL20484105 0.88 NCEH1 (0.42) NCEH1
SCHEMBL20483932 0.87 NCEH1 (0.43) NCEH1CES2SMN1; SMN2MAPK1
SCHEMBL20483693 0.85 NCEH1 (0.63) NCEH1
SCHEMBL20484104 0.84 NCEH1 (0.43) NCEH1SMN1; SMN2KMT2A
SCHEMBL20483896 0.83 NCEH1 (0.45) NCEH1HPGDMAPTALDH1A1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3622511-B1 HOLOGRAPHIC MEDIUM CONTAINING A PHOTOPOLYMERIC COATING FOR HOLOGRAPHIC EXPOSURE AND A LACQUER LAYER WITH HIGH RESISTANCE COVESTRO INTELLECTUAL PROPERTY GMBH & CO KG (DE) 2022-04-27 EP disclosed
EP-3622512-B1 FILM STRUCTURE COMPRISING A PHOTOPOLYMER COATING FOR HOLOGRAPHIC EXPOSURE AND A LACQUER LAYER WITH HIGH RESISTANCE COVESTRO INTELLECTUAL PROPERTY GMBH & CO KG (DE) 2022-04-27 EP disclosed
US-11267943-B2 Film structure containing a photopolymer layer for holographic exposure and a coating layer of high resistance COVESTRO DEUTSCHLAND AG (DE) 2022-03-08 US disclosed
US-20210292505-A1 FILM STRUCTURE CONTAINING A PHOTOPOLYMER LAYER FOR HOLOGRAPHIC EXPOSURE AND A COATING LAYER OF HIGH RESISTANCE COVESTRO DEUTSCHLAND AG (DE) 2021-09-23 US disclosed
EP-3401909-A1 FILM STRUCTURE COMPRISING A PHOTOPOLYMER COATING FOR HOLOGRAPHIC EXPOSURE AND A LACQUER LAYER WITH HIGH RESISTANCE Covestro Deutschland AG (DE) 2018-11-14 EP disclosed
EP-3401910-A1 HOLOGRAPHIC MEDIUM CONTAINING A PHOTOPOLYMERIC COATING FOR HOLOGRAPHIC EXPOSURE AND A LACQUER LAYER WITH HIGH RESISTANCE Covestro Deutschland AG (DE) 2018-11-14 EP disclosed
EP-3230261-B1 NAPHTHYL ACRYLATE AS WRITE MONOMERS FOR PHOTOPOLYMERS COVESTRO DEUTSCHLAND AG (DE) 2018-09-05 EP disclosed