SCHEMBL2058092

SCHEMBL2058092

NCCNCCNCCNCO

nearest known ligand 0.69

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA12 O43570 5/20 0.69
CA6 P23280 5/20 0.69
CA7 P43166 5/20 0.69
CA9 Q16790 5/20 0.69
CA14 Q9ULX7 5/20 0.69
CA5B Q9Y2D0 5/20 0.69
CA2 P00918 4/20 0.69
CA4 P22748 4/20 0.69
CA5A P35218 4/20 0.69
LMNA P02545 3/20 0.69
CA3 P07451 3/20 0.69
ALOX15 P16050 3/20 0.69
TDP1 Q9NUW8 2/20 0.69
CA1 P00915 2/20 0.69
ALDH1A1 P00352 1/20 0.69
TP53 P04637 1/20 0.69
KDM4E B2RXH2 1/20 0.65
MEN1 O00255 2/20 0.62
RECQL P46063 2/20 0.62
KMT2A Q03164 2/20 0.62

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10885036 1.00 CA12 (0.69) CA12CA6CA7CA9CA14
SCHEMBL1627711 1.00
Hydrochloric Acid SCHEMBL2436614 0.97 KDM4E (0.71) CA12CA6CA7CA9CA14
SCHEMBL125862 0.94
Bicarbonate SCHEMBL6013940 0.89 CA12 (0.55) CA12CA6CA7CA9CA14
Ethylene Glycol SCHEMBL11507834 0.84 CA12 (0.73) CA12CA6CA7CA9CA14
Monoethanolamine SCHEMBL9064478 0.84 CA12 (0.73) CA12CA6CA7CA9CA14
SCHEMBL25340653 0.83 CA12 (1.00) CA12CA6CA7CA9CA14
SCHEMBL15797 0.83 CA12 (1.00) CA12CA6CA7CA9CA14
SCHEMBL25342922 0.83 CA12 (1.00) CA12CA6CA7CA9CA14

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7968507-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 US claimed
US-20090084406-A1 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. 2009-04-02 US claimed
US-8163095-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-04-24 US disclosed
US-20110206829-A1 COMPOSITION FOR STRIPPING AND STRIPPING METHOD SAMSUNG DISPLAY CO., LTD. (KR) 2011-08-25 US disclosed
US-7968507-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 US disclosed
US-20090084406-A1 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. 2009-04-02 US disclosed
US-6638694-B2 Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) 2003-10-28 US disclosed
US-20030186175-A1 RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME IKEMOTO KAZUTO (JP) 2003-10-02 US disclosed
EP-1031884-A2 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2000-08-30 EP disclosed