SCHEMBL2058255

SCHEMBL2058255

CC(N)O.CCOC(C)O

nearest known ligand 0.45

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.45
THRB P10828 1/20 0.40
TSHR P16473 2/20 0.35
OPRM1 P35372 1/20 0.32
SPHK1 Q9NYA1 1/20 0.31
TRPV1 Q8NER1 1/20 0.31
TRPA1 O75762 1/20 0.31
MEN1 O00255 1/20 0.30
CYP1A2 P05177 1/20 0.30
KMT2A Q03164 1/20 0.30
TP53 P04637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Isopropylamine SCHEMBL9872512 0.94 LMNA (0.45) LMNATHRBTSHROPRM1SPHK1
Methylamine SCHEMBL11135497 0.91
SCHEMBL12087712 0.91
SCHEMBL15882 0.91
SCHEMBL27720603 0.91 LMNA (0.53) LMNATHRBTSHR
SCHEMBL27614609 0.91
Ethylamine SCHEMBL11135531 0.88
SCHEMBL29232752 0.88
Methane SCHEMBL3663242 0.88
Ammonia Solution, Strong SCHEMBL11833381 0.88

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7968507-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 US claimed
US-20090084406-A1 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. 2009-04-02 US claimed
US-8163095-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-04-24 US disclosed
US-20110206829-A1 COMPOSITION FOR STRIPPING AND STRIPPING METHOD SAMSUNG DISPLAY CO., LTD. (KR) 2011-08-25 US disclosed
US-7968507-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 US disclosed
US-20090084406-A1 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. 2009-04-02 US disclosed
US-6815150-B2 MIXTURE OF ALKANOLAMINE, SOLVENT, PHOSPHOROUS COMPOUND, OXYACID AND WATER SHARP KABUSHIKI KAISHA (JP) 2004-11-09 US disclosed
US-6638694-B2 Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) 2003-10-28 US disclosed
US-20030186175-A1 RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME IKEMOTO KAZUTO (JP) 2003-10-02 US disclosed
US-20030152874-A1 Photoresist stripping composition and process for stripping resist MITSUBISHI GAS CHEMICAL COMPANY INC. (JP) 2003-08-14 US disclosed
EP-1031884-A2 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2000-08-30 EP disclosed