SCHEMBL2058477

SCHEMBL2058477

CCN(CC)CCN(CO)CO

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 2/20 0.37
POLB P06746 2/20 0.37
KMT2A Q03164 2/20 0.37
MAPK1 P28482 2/20 0.36
CYP1A2 P05177 1/20 0.36
CYP2C9 P11712 1/20 0.36
HPGD P15428 1/20 0.36
HIF1A Q16665 1/20 0.36
HSD17B10 Q99714 1/20 0.36
ALDH1A1 P00352 3/20 0.35
TDP1 Q9NUW8 3/20 0.35
KDM4E B2RXH2 3/20 0.35
MAPT P10636 2/20 0.35
THRB P10828 1/20 0.35
APEX1 P27695 1/20 0.35
HTT P42858 1/20 0.35
RECQL P46063 1/20 0.35
CACNA1B Q00975 1/20 0.35
APBA1 Q02410 1/20 0.35
MCL1 Q07820 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7114323 0.93 MAPK1 (0.36) MEN1POLBKMT2AMAPK1CYP1A2
SCHEMBL230394 0.82
SCHEMBL509439 0.82
SCHEMBL15052708 0.82 MEN1 (0.39) MEN1POLBKMT2AMAPK1CYP1A2
SCHEMBL1719574 0.82 TDP1 (0.41) TDP1KDM4EMAPTTSHREYA2
SCHEMBL232247 0.82 MEN1 (0.39) MEN1POLBKMT2AMAPK1CYP1A2
SCHEMBL13260725 0.79 TDP1 (0.59) MEN1KMT2ACYP1A2HPGDHIF1A
SCHEMBL24359392 0.78 TDP1 (0.39) TDP1KDM4EMAPTTSHREYA2
SCHEMBL1049345 0.78 MEN1 (0.38) MEN1POLBKMT2AMAPK1CYP1A2
SCHEMBL2235928 0.78 MEN1 (0.38) MEN1POLBKMT2AMAPK1CYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7968507-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 US claimed
US-20090084406-A1 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. 2009-04-02 US claimed
US-8163095-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-04-24 US disclosed
US-20110206829-A1 COMPOSITION FOR STRIPPING AND STRIPPING METHOD SAMSUNG DISPLAY CO., LTD. (KR) 2011-08-25 US disclosed
US-7968507-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 US disclosed
US-20090084406-A1 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. 2009-04-02 US disclosed
US-6638694-B2 Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) 2003-10-28 US disclosed
US-20030186175-A1 RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME IKEMOTO KAZUTO (JP) 2003-10-02 US disclosed
EP-1031884-A2 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2000-08-30 EP disclosed