⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL109737 | 0.87 | — | — | |
| SCHEMBL5444913 | 0.75 | — | — | |
| SCHEMBL7757755 | 0.75 | — | — | |
| SCHEMBL2370041 | 0.75 | — | — | |
| SCHEMBL1531126 | 0.75 | — | — | |
| SCHEMBL9444701 | 0.75 | — | — | |
| SCHEMBL4101179 | 0.75 | — | — | |
| SCHEMBL1187518 | 0.75 | — | — | |
| Methane SCHEMBL16671598 | 0.75 | — | — | |
| SCHEMBL934027 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240243131-A1 | N/P-INDEPENDENTLY STRAINED POST-REPLACEMENT METAL GATE (RMG) GATE CUT FOR PERFORMANCE ENHANCED FINFET | QUALCOMM INCORPORATED | 2024-07-18 | — | — | US | claimed |
| CN-105417505-A | Lithium ion battery anode material and preparation method thereof | SUZHOU GERUI POWER SUPPLY TECH CO LTD | 2016-03-23 | — | — | CN | claimed |
| US-7968454-B2 | Method of forming pattern structure | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | claimed |
| US-20100184288-A1 | Method of forming pattern structure | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-07-22 | — | — | US | claimed |
| CN-1716548-A | Doped nitride film, doped oxide film and other doped films | IBM (US) | 2006-01-04 | — | — | CN | claimed |
| US-20240243131-A1 | N/P-INDEPENDENTLY STRAINED POST-REPLACEMENT METAL GATE (RMG) GATE CUT FOR PERFORMANCE ENHANCED FINFET | QUALCOMM INCORPORATED | 2024-07-18 | — | — | US | disclosed |
| CN-113178476-A | Fin field effect transistor and method for forming blunt fin by gas cluster ion beam | 江苏集创原子团簇科技研究院有限公司 | 2021-07-27 | — | — | CN | disclosed |
| EP-2999001-B1 | PRODUCTION OF SPACERS AT THE EDGES OF A TRANSISTOR GATE | COMMISSARIAT ENERGIE ATOMIQUE (FR) | 2019-09-04 | — | — | EP | disclosed |
| CN-110082849-A | Near-infrared narrow band filter and production method | 信阳舜宇光学有限公司 | 2019-08-02 | — | — | CN | disclosed |
| CN-105417505-A | Lithium ion battery anode material and preparation method thereof | SUZHOU GERUI POWER SUPPLY TECH CO LTD | 2016-03-23 | — | — | CN | disclosed |
| US-7968454-B2 | Method of forming pattern structure | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | disclosed |
| US-20100184288-A1 | Method of forming pattern structure | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-07-22 | — | — | US | disclosed |
| CN-101283115-A | Low-temperature deposition method and device for doped silicon nitride film | APPLIED MATERIALS INC (US) | 2008-10-08 | — | — | CN | disclosed |