SCHEMBL2065402

SCHEMBL2065402

CC(C)COCCN(CCOCC(C)C)CCOCC(C)C

nearest known ligand 0.35

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
HSD17B10 Q99714 2/20 0.33
MEN1 O00255 1/20 0.33
POLB P06746 1/20 0.33
KMT2A Q03164 1/20 0.33
BLM P54132 1/20 0.31
PMP22 Q01453 1/20 0.31
PIK3CD O00329 1/20 0.31
ALDH1A1 P00352 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL24294605 0.91 HSD17B10 (0.38) HSD17B10MEN1POLBKMT2AALDH1A1
SCHEMBL16365047 0.89
SCHEMBL8578960 0.87 MEN1 (0.48) HSD17B10MEN1POLBKMT2AALDH1A1
SCHEMBL25841672 0.82 HSD17B10 (0.41) HSD17B10BLMPMP22
SCHEMBL14577269 0.81 CA12 (0.38) HSD17B10PMP22PIK3CDALDH1A1
SCHEMBL11535497 0.80 SCN4A (0.33)
SCHEMBL8422948 0.79 HSD17B10 (0.58) HSD17B10MEN1POLBKMT2ABLM
SCHEMBL723497 0.78 HSD17B10 (0.41) HSD17B10ALDH1A1
SCHEMBL21554997 0.77 PIK3CD (0.32) HSD17B10PIK3CDALDH1A1
SCHEMBL15182727 0.77 CA12 (0.44) HSD17B10PMP22PIK3CDALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8148053-B2 DNA sequenceing, biochemical immobilization, and genetic diagnosis; forming monomolecular film using (alkoxyalkoxy)alkylsilane(triol and/or halide) such as 10-(methoxymethoxy)dodecyltrimethoxysilane which forms hydroxyl groups when exposed to acid; forming polysulfonates; radiation with high energy beams SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-04-03 US disclosed
US-20080233409-A1 With monomolecular film having silicon oxide chain; formed in presence of nitrogen containing organic base; preventing detachment when target molecule is immobilized on substrate SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-25 US disclosed
US-20080233309-A1 Method for manufacturing substrate for making microarray SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-25 US disclosed
US-7211367-B2 Photo acid generator, chemical amplification resist material SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-01 US disclosed
US-7090961-B2 Photo acid generator, chemical amplification resist material and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-08-15 US disclosed
US-20060160023-A1 Photo acid generator, chemical amplification resist material and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. 2006-07-20 US disclosed
US-20030224290-A1 Photo acid generator, chemical amplification resist material and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-12-04 US disclosed