Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HCAR2 | Q8TDS4 | 1/20 | 0.53 |
| ▸ | LTB4R | Q15722 | 3/20 | 0.47 |
| ▸ | LTB4R2 | Q9NPC1 | 3/20 | 0.47 |
| ▸ | KCNA5 | P22460 | 1/20 | 0.43 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.41 |
| ▸ | TP53 | P04637 | 1/20 | 0.41 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.41 |
| ▸ | ALOX5 | P09917 | 2/20 | 0.41 |
| ▸ | OPRM1 | P35372 | 3/20 | 0.40 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.40 |
| ▸ | FFAR1 | O14842 | 1/20 | 0.40 |
| ▸ | LPAR1 | Q92633 | 2/20 | 0.39 |
| ▸ | NAAA | Q02083 | 1/20 | 0.39 |
| ▸ | LPAR3 | Q9UBY5 | 1/20 | 0.39 |
| ▸ | P2RX1 | P51575 | 1/20 | 0.39 |
| ▸ | P2RX3 | P56373 | 1/20 | 0.39 |
| ▸ | P2RX4 | Q99571 | 1/20 | 0.39 |
| ▸ | P2RX7 | Q99572 | 1/20 | 0.39 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2446102 | 0.87 | HCAR2 (0.51) | HCAR2LTB4RLTB4R2ALDH1A1TP53 | |
| SCHEMBL9774475 | 0.87 | HCAR2 (0.51) | HCAR2LTB4RLTB4R2ALDH1A1TP53 | |
| SCHEMBL4707913 | 0.87 | HCAR2 (0.51) | HCAR2LTB4RLTB4R2ALDH1A1TP53 | |
| SCHEMBL18726930 | 0.84 | ALOX5 (0.42) | HCAR2LTB4RLTB4R2ALDH1A1ALOX5 | |
| SCHEMBL12436367 | 0.83 | HCAR2 (0.54) | HCAR2LTB4RLTB4R2ALDH1A1TP53 | |
| SCHEMBL15167655 | 0.82 | ALOX5 (0.44) | HCAR2ALDH1A1ALOX5KMT2ALPAR1 | |
| SCHEMBL15167651 | 0.82 | ALOX5 (0.44) | HCAR2ALDH1A1ALOX5KMT2ALPAR1 | |
| SCHEMBL26222316 | 0.82 | HCAR2 (0.50) | HCAR2LTB4RLTB4R2ALDH1A1TP53 | |
| SCHEMBL10838224 | 0.81 | HCAR2 (0.53) | HCAR2LTB4RLTB4R2ALDH1A1TP53 | |
| SCHEMBL9728263 | 0.80 | HCAR2 (0.51) | HCAR2LTB4RLTB4R2ALDH1A1TP53 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230384679-A1 | PHOTORESIST UNDER-LAYER AND METHOD OF FORMING PHOTORESIST PATTERN | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-30 | — | — | US | disclosed |
| US-20230384679-A1 | PHOTORESIST UNDER-LAYER AND METHOD OF FORMING PHOTORESIST PATTERN | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-30 | — | — | US | disclosed |
| US-20230375924-A1 | EUV Metallic Resist Performance Enhancement Via Additives | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-23 | — | — | US | disclosed |
| US-20230375924-A1 | EUV Metallic Resist Performance Enhancement Via Additives | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-23 | — | — | US | disclosed |
| US-20230367216-A1 | BOTTOM ANTIREFLECTIVE COATING MATERIALS | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-16 | — | — | US | disclosed |
| US-20230367216-A1 | BOTTOM ANTIREFLECTIVE COATING MATERIALS | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-16 | — | — | US | disclosed |
| US-11796918-B2 | Underlayer material for photoresist | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-10-24 | — | — | US | disclosed |
| US-11796918-B2 | Underlayer material for photoresist | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-10-24 | — | — | US | disclosed |
| US-11782345-B2 | Bottom antireflective coating materials | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-10-10 | — | — | US | disclosed |
| US-11782345-B2 | Bottom antireflective coating materials | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-10-10 | — | — | US | disclosed |
| US-10990013-B2 | Method for forming semiconductor structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-04-27 | — | — | US | disclosed |
| US-20210041784-A1 | Bottom Antireflective Coating Materials | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-02-11 | — | — | US | disclosed |
| US-20200365398-A1 | METHOD FOR FORMING SEMICONDUCTOR STRUCTURE BY PATTERNING RESIST LAYER HAVING INORGANIC MATERIAL | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-11-19 | — | — | US | disclosed |
| US-20200333710-A1 | Underlayer Material for Photoresist | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-10-22 | — | — | US | disclosed |
| US-10741391-B2 | Method for forming semiconductor structure by patterning resist layer having inorganic material | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-08-11 | — | — | US | disclosed |
| US-10698317-B2 | Underlayer material for photoresist | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-06-30 | — | — | US | disclosed |
| US-20200073243-A1 | Photosensitive Middle Layer | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-03-05 | — | — | US | disclosed |
| US-20190265590-A1 | Underlayer Material for Photoresist | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-08-29 | — | — | US | disclosed |
| US-20190122881-A1 | METHOD FOR FORMING SEMICONDUCTOR STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-04-25 | — | — | US | disclosed |
| US-20190096675-A1 | METHOD FOR FORMING SEMICONDUCTOR STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-03-28 | — | — | US | disclosed |