SCHEMBL2102183

SCHEMBL2102183

C=C[SiH2]N(CCCC)CNCC

nearest known ligand 0.32

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28812008 0.82 TSHR (0.36) TSHR
SCHEMBL5088362 0.78 TSHR (0.33) TSHR
SCHEMBL2275809 0.78 TSHR (0.33) TSHR
SCHEMBL2100519 0.75 TSHR (0.36) TSHR
SCHEMBL2102951 0.73 TSHR (0.34) TSHR
SCHEMBL2101788 0.73 CA12 (0.32) TSHR
SCHEMBL2099428 0.72 TSHR (0.33) TSHR
SCHEMBL2101147 0.72 TSHR (0.33) TSHR
Diethylamine SCHEMBL27844845 0.71 TP53 (0.38)
SCHEMBL2101638 0.70 TSHR (0.32) TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed