⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2100124 | 0.72 | — | — | |
| SCHEMBL2275072 | 0.69 | — | — | |
| SCHEMBL611009 | 0.69 | — | — | |
| SCHEMBL3108275 | 0.67 | — | — | |
| SCHEMBL23110903 | 0.67 | — | — | |
| SCHEMBL610281 | 0.67 | — | — | |
| SCHEMBL26255372 | 0.67 | — | — | |
| SCHEMBL233891 | 0.67 | — | — | |
| SCHEMBL2103430 | 0.65 | — | — | |
| SCHEMBL2102939 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12584212-B2 | Compositions and methods using same for germanium seed layer | VERSUM MATERIALS US, LLC (US) | 2026-03-24 | — | — | US | claimed |
| US-20230287562-A1 | COMPOSITIONS ND METHODS USING SAME FOR GERMANIUM SEED LAYER | VERSUM MATERIALS US, LLC | 2023-09-14 | — | — | US | claimed |
| EP-4176100-A1 | COMPOSITIONS AND METHODS USING SAME FOR GERMANIUM SEED LAYER | Versum Materials US, LLC (US) | 2023-05-10 | — | — | EP | claimed |
| WO-2022020705-A1 | COMPOSITIONS AND METHODS USING SAME FOR GERMANIUM SEED LAYER | VERSUM MATERIALS US, LLC (US) | 2022-01-27 | — | — | WO | claimed |
| EP-2463404-B1 | METHOD FOR FORMING SIO2 FILM | VERSUM MAT US LLC (US) | 2019-10-23 | — | — | EP | claimed |
| EP-2251899-B1 | Dielectric barrier deposition using nitrogen containing precursor | VERSUM MAT US LLC (US) | 2018-03-28 | — | — | EP | claimed |
| US-8889235-B2 | Dielectric barrier deposition using nitrogen containing precursor | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2014-11-18 | — | — | US | claimed |
| US-20140065844-A1 | Amino Vinylsilane Precursors for Stressed SiN Films | VERSUM MATERIALS US, LLC | 2014-03-06 | — | — | US | claimed |
| US-8460753-B2 | Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-06-11 | — | — | US | claimed |
| EP-2192207-B1 | Method using amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films | AIR PROD & CHEM (US) | 2012-06-20 | — | — | EP | claimed |
| US-20100291321-A1 | Dielectric Barrier Deposition Using Nitrogen Containing Precursor | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2010-11-18 | — | — | US | claimed |
| EP-2251899-A1 | Dielectric barrier deposition using nitrogen containing precursor | Air Products and Chemicals, Inc. (US) | 2010-11-17 | — | — | EP | claimed |
| US-12584212-B2 | Compositions and methods using same for germanium seed layer | VERSUM MATERIALS US, LLC (US) | 2026-03-24 | — | — | US | disclosed |
| US-20230287562-A1 | COMPOSITIONS ND METHODS USING SAME FOR GERMANIUM SEED LAYER | VERSUM MATERIALS US, LLC | 2023-09-14 | — | — | US | disclosed |
| US-20230287562-A1 | COMPOSITIONS ND METHODS USING SAME FOR GERMANIUM SEED LAYER | VERSUM MATERIALS US, LLC | 2023-09-14 | — | — | US | disclosed |
| US-20230287562-A1 | COMPOSITIONS ND METHODS USING SAME FOR GERMANIUM SEED LAYER | VERSUM MATERIALS US, LLC | 2023-09-14 | — | — | US | disclosed |
| EP-2251899-A1 | Dielectric barrier deposition using nitrogen containing precursor | Air Products and Chemicals, Inc. (US) | 2010-11-17 | — | — | EP | disclosed |
| EP-2192207-A1 | Amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2010-06-02 | — | — | EP | disclosed |
| US-20100120262-A1 | Amino Vinylsilane Precursors for Stressed SiN Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2010-05-13 | — | — | US | disclosed |
| US-20090085170-A1 | INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2009-04-02 | — | — | US | disclosed |