SCHEMBL2102937

SCHEMBL2102937

CCNc1cccc([SiH3])c1NCC

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 2/20 0.39
KMT2A Q03164 2/20 0.39
USP2 O75604 1/20 0.39
CASP1 P29466 1/20 0.39
BRCA1 P38398 1/20 0.39
CASP7 P55210 1/20 0.39
GRM5 P41594 1/20 0.37
CYP3A4 P08684 1/20 0.37
TSHR P16473 1/20 0.37
RECQL P46063 1/20 0.37
IDO1 P14902 2/20 0.36
AOC1 P19801 1/20 0.33
AOC3 Q16853 1/20 0.33
AR P10275 1/20 0.33
KCNH2 Q12809 1/20 0.33
CACNA1C Q13936 1/20 0.33
SCN5A Q14524 1/20 0.33
MAPT P10636 4/20 0.31
SMN1; SMN2 Q16637 2/20 0.31
PKM P14618 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8164568 0.84 MEN1 (0.44) MEN1KMT2AUSP2CASP1BRCA1
SCHEMBL233709 0.81 CYP3A4 (0.38) CYP3A4TSHRRECQLIDO1AOC1
SCHEMBL2269135 0.80 IDO1 (0.44) MEN1KMT2AUSP2CASP1BRCA1
SCHEMBL2104146 0.78 MAPK14 (0.39) KMT2AUSP2KCNH2CACNA1CSCN5A
SCHEMBL8762491 0.77 CYP3A4 (0.47) MEN1KMT2AUSP2CASP1BRCA1
SCHEMBL1953525 0.75 IDO1 (0.48) MEN1KMT2AUSP2CASP1BRCA1
SCHEMBL13836510 0.75 MEN1 (0.39) MEN1KMT2AUSP2CASP1BRCA1
SCHEMBL5047053 0.75 LCK (0.40) MEN1KMT2AUSP2CASP1BRCA1
SCHEMBL2268858 0.75 MEN1 (0.36) MEN1KMT2AUSP2CASP1BRCA1
SCHEMBL3786919 0.72 CYP3A4 (0.39) MEN1KMT2AUSP2CASP1BRCA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed
EP-0098911-B1 IMPROVED PROCESS FOR THE PREPARATION OF OXIMATOHYDRIDOSILANES AND AMINOXYHYDRIDOSILANES UNION CARBIDE CORPORATION (US) 1986-04-16 EP disclosed