SCHEMBL2104146

SCHEMBL2104146

CCNc1c([SiH3])cccc1Cl

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPK14 Q16539 2/20 0.39
NLRP3 Q96P20 1/20 0.38
MAPT P10636 2/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
ADRA2A P08913 1/20 0.34
ADRA2C P18825 1/20 0.34
ADRA1D P25100 1/20 0.34
ADRA1A P35348 1/20 0.34
ADRA1B P35368 1/20 0.34
EGFR P00533 2/20 0.34
LMNA P02545 2/20 0.33
MITF O75030 1/20 0.33
USP2 O75604 1/20 0.33
ALDH1A1 P00352 1/20 0.33
POLB P06746 1/20 0.33
HTT P42858 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
FGFR1 P11362 1/20 0.33
KDM4E B2RXH2 1/20 0.33
CYP1A2 P05177 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7350648 0.85 CYP1A2 (0.43) MAPK14NLRP3MAPTL3MBTL1LMNA
SCHEMBL2102937 0.78 MEN1 (0.39) MAPTUSP2POLBHTTKDM4E
SCHEMBL5047053 0.78 LCK (0.40) MAPK14NLRP3MAPTL3MBTL1ADRA1A
SCHEMBL11663327 0.78 MAPK14 (0.49) MAPK14NLRP3MAPTL3MBTL1ALDH1A1
SCHEMBL2101475 0.77 ADRA2A (0.37) NLRP3MAPTL3MBTL1ADRA2AADRA2C
SCHEMBL2100207 0.76 MITF (0.30) MAPTLMNAMITFUSP2ALDH1A1
SCHEMBL2865982 0.76 MEN1 (0.41) MAPK14MAPTALDH1A1HTTKMT2A
SCHEMBL3786027 0.76 ALDH1A1 (0.47) MAPK14NLRP3MAPTLMNAMITF
SCHEMBL24292090 0.74 LCK (0.36) MAPK14NLRP3ADRA1ALMNAUSP2
Acetic Acid SCHEMBL6955401 0.74 NLRP3 (0.44) MAPK14NLRP3MAPTL3MBTL1ADRA1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed