SCHEMBL2103682

SCHEMBL2103682

C=C[SiH](NCN(CC)CC)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
CACNA2D1 P54289 9/20 0.39
CHRM2 P08172 1/20 0.33
HTR1A P08908 1/20 0.33
ADRA2A P08913 1/20 0.33
CHRM1 P11229 1/20 0.33
DRD1 P21728 1/20 0.33
SLC6A2 P23975 1/20 0.33
SLC6A4 P31645 1/20 0.33
ADRA1A P35348 1/20 0.33
OPRM1 P35372 1/20 0.33
DRD3 P35462 1/20 0.33
SLC6A3 Q01959 1/20 0.33
KCNH2 Q12809 1/20 0.33
ALDH1A1 P00352 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
SIGMAR1 Q99720 1/20 0.31
TSHR P16473 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2274702 0.80 KCNN4 (0.32) ALDH1A1TSHR
SCHEMBL2100765 0.77 KCNH2 (0.37) CACNA2D1CHRM2HTR1AADRA2ACHRM1
SCHEMBL2101247 0.75 CACNA2D1 (0.36) CACNA2D1CHRM2HTR1AADRA2ACHRM1
SCHEMBL2101106 0.75 HTT (0.33)
SCHEMBL2102330 0.74 CACNA2D1 (0.35) CACNA2D1CHRM2HTR1AADRA2ACHRM1
SCHEMBL2100739 0.71 CACNA2D1 (0.40) CACNA2D1CHRM2HTR1AADRA2ACHRM1
SCHEMBL2103508 0.71 MEN1 (0.37) CACNA2D1CHRM2HTR1AADRA2ACHRM1
SCHEMBL2100481 0.71 CACNA2D1 (0.36) CACNA2D1CHRM2HTR1AADRA2ACHRM1
SCHEMBL2270393 0.70 TSHR (0.33) ALDH1A1TSHR
SCHEMBL2104329 0.69 CACNA2D1 (0.38) CACNA2D1CHRM2HTR1AADRA2ACHRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed