SCHEMBL2104240

SCHEMBL2104240

CN[Si](NC)(c1ccccc1)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.41
ESR1 P03372 1/20 0.37
ESR2 Q92731 1/20 0.37
KCNN4 O15554 1/20 0.36
KDM4E B2RXH2 2/20 0.35
MAPT P10636 2/20 0.35
CYP3A4 P08684 1/20 0.35
TDP1 Q9NUW8 4/20 0.33
ALDH1A1 P00352 3/20 0.33
TAAR1 Q96RJ0 3/20 0.33
HSD17B10 Q99714 2/20 0.33
LMNA P02545 2/20 0.33
ALOX12 P18054 1/20 0.33
ACHE P22303 1/20 0.33
ATM Q13315 1/20 0.33
USP2 O75604 1/20 0.33
POLB P06746 1/20 0.33
HPGD P15428 1/20 0.33
RECQL P46063 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL49919 0.77 TSHR (0.41) TSHRESR1ESR2KCNN4KDM4E
SCHEMBL2100879 0.77 TSHR (0.41) TSHRESR1ESR2KCNN4KDM4E
SCHEMBL235043 0.74 ESR1 (0.41) TSHRESR1ESR2KCNN4KDM4E
SCHEMBL17830152 0.74 ESR1 (0.41) TSHRESR1ESR2KCNN4KDM4E
SCHEMBL2275514 0.74 ESR1 (0.41) TSHRESR1ESR2KCNN4KDM4E
SCHEMBL2102659 0.72 TSHR (0.38) TSHRESR1ESR2KCNN4KDM4E
SCHEMBL2102177 0.72 KCNN4 (0.39) TSHRESR1ESR2KCNN4KDM4E
SCHEMBL2100774 0.72 TSHR (0.38) TSHRESR1ESR2KCNN4KDM4E
SCHEMBL2101836 0.72 KCNN4 (0.39) TSHRESR1ESR2KCNN4KDM4E
SCHEMBL2102291 0.70 ESR1 (0.43) TSHRESR1ESR2KCNN4KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed
US-4208492-A ENGINEERING THERMOPLASTIC ELASTOMERS UNION CARBIDE CORPORATION (US) 1980-06-17 US disclosed
US-4145504-A High temperature carborane-siloxane elastomers intermediate polymeric products and process for preparation UNION CARBIDE CORPORATION (US) 1979-03-20 US disclosed
US-4115427-A BY REACTION OF A HYDROGEN SILANE AND AN AMINE DYNAMIT NOBEL AKTIENGESELLSCHAFT (DE) 1978-09-19 US disclosed