SCHEMBL2102291

SCHEMBL2102291

CN[Si](C)(Cl)c1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 1/20 0.43
ESR2 Q92731 1/20 0.43
TSHR P16473 1/20 0.36
KCNN4 O15554 1/20 0.32
NR1H2 P55055 2/20 0.31
NR1H3 Q13133 2/20 0.31
TDO2 P48775 1/20 0.31
MAPT P10636 3/20 0.31
KDM4E B2RXH2 2/20 0.31
CYP3A4 P08684 1/20 0.31
LMNA P02545 1/20 0.31
TDP1 Q9NUW8 2/20 0.30
ATM Q13315 1/20 0.30
TAAR1 Q96RJ0 1/20 0.30
USP2 O75604 1/20 0.30
ALDH1A1 P00352 1/20 0.30
POLB P06746 1/20 0.30
HPGD P15428 1/20 0.30
RECQL P46063 1/20 0.30
NPSR1 Q6W5P4 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17830152 0.79 ESR1 (0.41) ESR1ESR2TSHRKCNN4NR1H2
SCHEMBL2100774 0.77 TSHR (0.38) ESR1ESR2TSHRKCNN4MAPT
SCHEMBL2102659 0.77 TSHR (0.38) ESR1ESR2TSHRKCNN4MAPT
SCHEMBL2101836 0.77 KCNN4 (0.39) ESR1ESR2TSHRKCNN4NR1H2
SCHEMBL2100216 0.76 ESR1 (0.40) ESR1ESR2KCNN4MAPTKDM4E
SCHEMBL22283334 0.75 ESR1 (0.39) ESR1ESR2TSHRCYP3A4LMNA
SCHEMBL6902982 0.75 ESR1 (0.39) ESR1ESR2NR1H2NR1H3MAPT
SCHEMBL235043 0.74 ESR1 (0.41) ESR1ESR2TSHRKCNN4NR1H2
SCHEMBL2275514 0.74 ESR1 (0.41) ESR1ESR2TSHRKCNN4NR1H2
SCHEMBL68909 0.73 ESR1 (0.44) ESR1ESR2TSHRNR1H2NR1H3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed