SCHEMBL2113130

SCHEMBL2113130

Oc1c(O)c(O)c2cc3c(O)c(O)c(O)c(O)c3cc2c1O

nearest known ligand 0.36

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
BACE1 P56817 1/20 0.36
TSHR P16473 3/20 0.32
TTR P02766 2/20 0.32
CYP3A4 P08684 2/20 0.32
HSD17B10 Q99714 2/20 0.32
TDP1 Q9NUW8 1/20 0.32
SELL P14151 1/20 0.32
SELP P16109 1/20 0.32
SELE P16581 1/20 0.32
HPGD P15428 1/20 0.32
CASP1 P29466 1/20 0.32
ALDH1A1 P00352 1/20 0.32
RECQL P46063 1/20 0.32
CA1 P00915 1/20 0.32
CA2 P00918 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL24991523 0.84 SRC (0.45) BACE1HSD17B10TDP1SELLSELP
SCHEMBL19253229 0.78 CYP1A2 (0.46) TSHRHSD17B10HPGDCASP1ALDH1A1
SCHEMBL22966139 0.75 SELL (0.42) BACE1HSD17B10TDP1SELLSELP
SCHEMBL2114515 0.74 PTPN22 (0.50) CYP3A4HSD17B10TDP1HPGDALDH1A1
SCHEMBL5948879 0.71
SCHEMBL23637792 0.68 CYP1A2 (0.38) TSHRCYP3A4HSD17B10TDP1ALDH1A1
SCHEMBL27740 0.67 IDO1 (0.53) TSHRCYP3A4HSD17B10TDP1HPGD
Phloroglucinol SCHEMBL5071422 0.67 BACE1 (0.80) BACE1TTRCYP3A4HSD17B10TDP1
SCHEMBL9175011 0.66 CA1 (0.50) TSHRTTRCYP3A4HSD17B10TDP1
SCHEMBL5949143 0.66 CA9 (0.31) CA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6544717-B2 Antireflective coating TOKYO OHKA KOGYO CO., LTD. (JP) 2003-04-08 US claimed
US-20010018163-A1 Undercoating composition for photolithographic resist TOKYO OHKA KOGYO CO., LTD. (JP) 2001-08-30 US claimed
EP-4245743-A1 METHOD FOR PREPARATION OF DEUTERATED ANTHRACENE COMPOUND, REACTION COMPOSITION, DEUTERATED ANTHRACENE COMPOUND, AND COMPOSITION Lg Chem, Ltd. (KR) 2023-09-20 EP disclosed
WO-2022169218-A1 METHOD FOR PREPARATION OF DEUTERATED ANTHRACENE COMPOUND, REACTION COMPOSITION, DEUTERATED ANTHRACENE COMPOUND, AND COMPOSITION 주식회사 엘지화학 2022-08-11 WO disclosed
US-8158568-B2 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2012-04-17 US disclosed
EP-1641908-B1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO LTD (JP) 2010-11-17 EP disclosed
US-20100248477-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating a substrate therewith YOKOI SHIGERU 2010-09-30 US disclosed
US-20100051582-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2010-03-04 US disclosed
US-20090156005-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2009-06-18 US disclosed
US-7442675-B2 Cleaning composition and method of cleaning semiconductor substrate TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-28 US disclosed
US-20060241012-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2006-10-26 US disclosed
US-6544717-B2 Antireflective coating TOKYO OHKA KOGYO CO., LTD. (JP) 2003-04-08 US disclosed
US-6515073-B2 Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-04 US disclosed
US-20020077426-A1 Protective coating composition for dual damascene process TOKYO OHKA KOGYO CO., LTD. (JP) 2002-06-20 US disclosed
US-20020055064-A1 Anti-reflective coating composition, multilayer photoresist material using the same, and method for forming pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2002-05-09 US disclosed
US-20010049072-A1 Undercoating composition for photolithographic resist HIROSAKI TAKAKO (JP) 2001-12-06 US disclosed
US-20010044080-A1 Method for forming a finely patterned photoresist layer TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-22 US disclosed
US-20010036998-A1 Anti-reflective coating-forming composition TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-01 US disclosed
US-6284428-B1 FOR FORMING OF ANTIREFLECTION UNDERCOATING LAYER TO INTERVENE BETWEEN SURFACE OF SUBSTRATE AND PHOTORESIST LAYER TO BE PATTERNED IN MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICES TOKYO OHKA KOGYO CO., LTD, (JP) 2001-09-04 US disclosed
US-20010018163-A1 Undercoating composition for photolithographic resist TOKYO OHKA KOGYO CO., LTD. (JP) 2001-08-30 US disclosed