SCHEMBL2114515

SCHEMBL2114515

Oc1ccc2cc3c(O)c(O)c(O)c(O)c3cc2c1O

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PTPN22 Q9Y2R2 1/20 0.50
LCK P06239 5/20 0.43
CDC42 P60953 4/20 0.41
RAC1 P63000 4/20 0.41
ACHE P22303 2/20 0.37
ST14 Q9Y5Y6 1/20 0.36
EGFR P00533 2/20 0.36
TRPM4 Q8TD43 1/20 0.34
KDM4E B2RXH2 1/20 0.34
PRKD3 O94806 1/20 0.34
ALDH1A1 P00352 1/20 0.34
LMNA P02545 1/20 0.34
PRKCG P05129 1/20 0.34
CYP1A2 P05177 1/20 0.34
PRKCB P05771 1/20 0.34
POLB P06746 1/20 0.34
CYP3A4 P08684 1/20 0.34
CYP2D6 P10635 1/20 0.34
MAPT P10636 1/20 0.34
THRB P10828 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30662390 0.92 PTPN22 (0.52) PTPN22LCKCDC42RAC1ACHE
SCHEMBL25390886 0.92 PTPN22 (0.52) PTPN22LCKCDC42RAC1ACHE
SCHEMBL18068463 0.92 PTPN22 (0.56) PTPN22LCKCDC42RAC1ACHE
SCHEMBL15257812 0.90 PTPN22 (0.54) PTPN22LCKCDC42RAC1ACHE
SCHEMBL7793886 0.82 CDC42 (0.55) PTPN22LCKCDC42RAC1ACHE
SCHEMBL25429187 0.81 PTPN22 (0.64) PTPN22LCKEGFRTRPM4KDM4E
SCHEMBL82870 0.81 PTPN22 (0.64) PTPN22LCKEGFRTRPM4KDM4E
SCHEMBL29447273 0.81 PTPN22 (0.64) PTPN22LCKEGFRTRPM4KDM4E
SCHEMBL28752695 0.79 PTPN22 (0.61) PTPN22LCKEGFRTRPM4KDM4E
SCHEMBL9430385 0.79 PTPN22 (0.61) PTPN22LCKEGFRTRPM4KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6544717-B2 Antireflective coating TOKYO OHKA KOGYO CO., LTD. (JP) 2003-04-08 US claimed
US-20010018163-A1 Undercoating composition for photolithographic resist TOKYO OHKA KOGYO CO., LTD. (JP) 2001-08-30 US claimed
US-8158568-B2 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2012-04-17 US disclosed
EP-1641908-B1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO LTD (JP) 2010-11-17 EP disclosed
US-20100248477-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating a substrate therewith YOKOI SHIGERU 2010-09-30 US disclosed
CN-1849386-B Cleaning composition, method for cleaning semiconductor substrate, and method for forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO LTD INTEL 2010-07-28 CN disclosed
US-20100051582-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2010-03-04 US disclosed
CN-100504620-C Etching solution for forming bimetallic mosaic structure and base plate treatment method TOKYO APPLIED CHEMICAL INDUSTR (JP) 2009-06-24 CN disclosed
US-20090156005-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2009-06-18 US disclosed
US-7442675-B2 Cleaning composition and method of cleaning semiconductor substrate TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-28 US disclosed
US-20060241012-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2006-10-26 US disclosed
US-6544717-B2 Antireflective coating TOKYO OHKA KOGYO CO., LTD. (JP) 2003-04-08 US disclosed
US-6515073-B2 Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-04 US disclosed
US-20020077426-A1 Protective coating composition for dual damascene process TOKYO OHKA KOGYO CO., LTD. (JP) 2002-06-20 US disclosed
US-20020055064-A1 Anti-reflective coating composition, multilayer photoresist material using the same, and method for forming pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2002-05-09 US disclosed
US-20010049072-A1 Undercoating composition for photolithographic resist HIROSAKI TAKAKO (JP) 2001-12-06 US disclosed
US-20010044080-A1 Method for forming a finely patterned photoresist layer TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-22 US disclosed
US-20010036998-A1 Anti-reflective coating-forming composition TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-01 US disclosed
US-6284428-B1 FOR FORMING OF ANTIREFLECTION UNDERCOATING LAYER TO INTERVENE BETWEEN SURFACE OF SUBSTRATE AND PHOTORESIST LAYER TO BE PATTERNED IN MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICES TOKYO OHKA KOGYO CO., LTD, (JP) 2001-09-04 US disclosed
US-20010018163-A1 Undercoating composition for photolithographic resist TOKYO OHKA KOGYO CO., LTD. (JP) 2001-08-30 US disclosed