Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 1/20 | 0.53 |
| ▸ | CA2 | P00918 | 1/20 | 0.53 |
| ▸ | ACLY | P53396 | 6/20 | 0.42 |
| ▸ | F2 | P00734 | 3/20 | 0.42 |
| ▸ | PRSS1 | P07477 | 3/20 | 0.42 |
| ▸ | PRSS2 | P07478 | 3/20 | 0.42 |
| ▸ | PRSS3 | P35030 | 3/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.39 |
| ▸ | TSHR | P16473 | 2/20 | 0.39 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.39 |
| ▸ | HPGD | P15428 | 1/20 | 0.39 |
| ▸ | NSD2 | O96028 | 1/20 | 0.39 |
| ▸ | MMP14 | P50281 | 1/20 | 0.39 |
| ▸ | CASP6 | P55212 | 1/20 | 0.39 |
| ▸ | POLB | P06746 | 1/20 | 0.39 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.39 |
| ▸ | RECQL | P46063 | 1/20 | 0.39 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.37 |
| ▸ | ERN1 | O75460 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9248011 | 0.83 | CA1 (0.50) | CA1CA2ACLYF2PRSS1 | |
| SCHEMBL9808163 | 0.82 | CA1 (0.70) | CA1CA2ACLYF2PRSS1 | |
| SCHEMBL29385668 | 0.82 | CA1 (0.70) | CA1CA2ACLYF2PRSS1 | |
| SCHEMBL6355918 | 0.74 | TSHR (0.56) | CA1CA2ALDH1A1TSHRHSD17B10 | |
| SCHEMBL9247953 | 0.74 | KMT2A (0.47) | CA1CA2ACLYALDH1A1TSHR | |
| SCHEMBL10600623 | 0.73 | HKDC1 (0.38) | CA1CA2ALDH1A1HSD17B10HPGD | |
| SCHEMBL3471628 | 0.73 | POLB (0.61) | CA1CA2ACLYALDH1A1TSHR | |
| SCHEMBL9125500 | 0.73 | HSD17B10 (0.50) | CA1CA2ALDH1A1TSHRHSD17B10 | |
| SCHEMBL2113616 | 0.70 | CA1 (0.45) | CA1CA2ACLYF2PRSS1 | |
| SCHEMBL11038427 | 0.70 | CA1 (0.71) | CA1CA2ACLYF2PRSS1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8158568-B2 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-04-17 | — | — | US | disclosed |
| EP-1641908-B1 | CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO LTD (JP) | 2010-11-17 | — | — | EP | disclosed |
| US-20100248477-A1 | Cleaning liquid used in process for forming dual damascene structure and a process for treating a substrate therewith | YOKOI SHIGERU | 2010-09-30 | — | — | US | disclosed |
| US-20100051582-A1 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith | YOKOI SHIGERU | 2010-03-04 | — | — | US | disclosed |
| CN-100504620-C | Etching solution for forming bimetallic mosaic structure and base plate treatment method | TOKYO APPLIED CHEMICAL INDUSTR (JP) | 2009-06-24 | — | — | CN | disclosed |
| US-20090156005-A1 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith | YOKOI SHIGERU | 2009-06-18 | — | — | US | disclosed |
| US-7442675-B2 | Cleaning composition and method of cleaning semiconductor substrate | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-28 | — | — | US | disclosed |
| US-7179399-B2 | Material for forming protective film | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-20060241012-A1 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith | YOKOI SHIGERU | 2006-10-26 | — | — | US | disclosed |
| EP-1641908-A1 | CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2006-04-05 | — | — | EP | disclosed |
| US-6689535-B2 | A NOVALAK RESIN CROSSLINKING AGENT HAVING HYDROXYALKYL AND/OR ALKOXYALKYL GROUPS AND AN ACIDIC COMPOUND; UNDERCOATINGS; A RECTANGULAR CROSS-SECTIONAL PROFILE WITHOUT CAUSING FOOTING, UNDERCUTTING, ETC. AT THE BOTTOM | TOKYO OHKA KOGYO CO., LTD (JP) | 2004-02-10 | — | — | US | disclosed |
| US-6544717-B2 | Antireflective coating | TOKYO OHKA KOGYO CO., LTD. (JP) | 2003-04-08 | — | — | US | disclosed |
| US-20030032280-A1 | Method for filling fine hole | TOKYO OHKA KOGYO CO., LTD. (JP) | 2003-02-13 | — | — | US | disclosed |
| US-6515073-B2 | Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns | TOKYO OHKA KOGYO CO., LTD. (JP) | 2003-02-04 | — | — | US | disclosed |
| US-20020182360-A1 | Material for forming protective film | TOKYO OHKA KOGYO CO., LTD. (JP) | 2002-12-05 | — | — | US | disclosed |
| US-20020055064-A1 | Anti-reflective coating composition, multilayer photoresist material using the same, and method for forming pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2002-05-09 | — | — | US | disclosed |
| US-20010049072-A1 | Undercoating composition for photolithographic resist | HIROSAKI TAKAKO (JP) | 2001-12-06 | — | — | US | disclosed |
| US-20010036998-A1 | Anti-reflective coating-forming composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2001-11-01 | — | — | US | disclosed |
| US-6284428-B1 | FOR FORMING OF ANTIREFLECTION UNDERCOATING LAYER TO INTERVENE BETWEEN SURFACE OF SUBSTRATE AND PHOTORESIST LAYER TO BE PATTERNED IN MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICES | TOKYO OHKA KOGYO CO., LTD, (JP) | 2001-09-04 | — | — | US | disclosed |
| US-20010018163-A1 | Undercoating composition for photolithographic resist | TOKYO OHKA KOGYO CO., LTD. (JP) | 2001-08-30 | — | — | US | disclosed |