SCHEMBL2114425

SCHEMBL2114425

O=C(O)c1c2cccc(O)c2cc2cccc(O)c12

nearest known ligand 0.49

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ GRIN2D O15399 1/20 0.49
▸ GRIN2A Q12879 1/20 0.49
▸ GRIN2B Q13224 1/20 0.49
▸ GRIN2C Q14957 1/20 0.49
▸ CA12 O43570 1/20 0.48
▸ CA1 P00915 1/20 0.48
▸ CA2 P00918 1/20 0.48
▸ CA7 P43166 1/20 0.48
▸ CA9 Q16790 1/20 0.48
▸ CA14 Q9ULX7 1/20 0.48
▸ KMT2A Q03164 5/20 0.47
▸ MEN1 O00255 4/20 0.47
▸ ALDH1A1 P00352 3/20 0.47
▸ HPGD P15428 3/20 0.47
▸ HSD17B10 Q99714 3/20 0.47
▸ KDM4E B2RXH2 3/20 0.47
▸ CYP1A2 P05177 2/20 0.47
▸ GLA P06280 1/20 0.47
▸ CYP2C19 P33261 1/20 0.47
▸ MCL1 Q07820 2/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27818080 0.84 CYP1A2 (0.69) GRIN2DGRIN2AGRIN2BGRIN2CCA12
SCHEMBL24116337 0.79 KMT2A (0.53) GRIN2DGRIN2AGRIN2BGRIN2CCA12
SCHEMBL6340507 0.77 CA12 (0.54) GRIN2DGRIN2AGRIN2BGRIN2CCA12
SCHEMBL11050089 0.76 NR4A1 (0.56) GRIN2DGRIN2AGRIN2BGRIN2CKMT2A
SCHEMBL7911783 0.76 ALDH1A1 (0.65) GRIN2DGRIN2AGRIN2BGRIN2CCA1
SCHEMBL24116593 0.75 KMT2A (0.59) GRIN2DGRIN2AGRIN2BGRIN2CCA12
SCHEMBL9350261 0.75 MEN1 (0.50) GRIN2DGRIN2AGRIN2BGRIN2CKMT2A
SCHEMBL3392195 0.74 CA12 (0.61) GRIN2DGRIN2AGRIN2BGRIN2CCA12
SCHEMBL24116589 0.73 CA12 (0.54) GRIN2DGRIN2AGRIN2BGRIN2CCA12
SCHEMBL14917525 0.72 DHODH (0.53) CA12CA1CA2CA7CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8158568-B2 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2012-04-17 — — US disclosed
EP-1641908-B1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO LTD (JP) 2010-11-17 — — EP disclosed
US-20100248477-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating a substrate therewith YOKOI SHIGERU 2010-09-30 — — US disclosed
CN-1849386-B Cleaning composition, method for cleaning semiconductor substrate, and method for forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO LTD INTEL 2010-07-28 — — CN disclosed
US-20100051582-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2010-03-04 — — US disclosed
CN-100504620-C Etching solution for forming bimetallic mosaic structure and base plate treatment method TOKYO APPLIED CHEMICAL INDUSTR (JP) 2009-06-24 — — CN disclosed
US-20090156005-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2009-06-18 — — US disclosed
US-7442675-B2 Cleaning composition and method of cleaning semiconductor substrate TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-28 — — US disclosed
US-20060241012-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith YOKOI SHIGERU 2006-10-26 — — US disclosed
CN-1849386-A Cleaning composition, method for cleaning semiconductor substrate, and method for forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO LTD INTEL (JP) 2006-10-18 — — CN disclosed
US-20040259761-A1 Cleaning composition, method of cleaning semiconductor substrate, and method of forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO., LTD. INTEL CORPORATION 2004-12-23 — — US disclosed
US-20040121937-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2004-06-24 — — US disclosed
CN-1495535-A Etching solution for forming bimetallic mosaic structure craft and base phate treatment method ͬ�Ϳ�ҵ��ʽ���� 2004-05-12 — — CN disclosed
US-6515073-B2 Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-04 — — US disclosed
US-20010036998-A1 Anti-reflective coating-forming composition TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-01 — — US disclosed
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