⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Butane SCHEMBL3298430 | 0.97 | — | — | |
| SCHEMBL124699 | 0.83 | — | — | |
| SCHEMBL4300900 | 0.82 | — | — | |
| SCHEMBL3329178 | 0.80 | — | — | |
| SCHEMBL5961055 | 0.80 | — | — | |
| SCHEMBL2802140 | 0.80 | — | — | |
| Butane SCHEMBL3862936 | 0.80 | — | — | |
| Hydrochloric Acid SCHEMBL9709522 | 0.80 | — | — | |
| SCHEMBL9680523 | 0.78 | THRB (0.40) | — | |
| SCHEMBL3467579 | 0.78 | THRB (0.40) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 151 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-112126067-A | Preparation method and application of novel liquid silicon carbide ceramic precursor | 宁波曙翔新材料股份有限公司 | 2020-12-25 | — | — | CN | claimed |
| CN-112126065-A | Preparation method of solid silicon carbide ceramic precursor | 长沙科航特种织造有限公司 | 2020-12-25 | — | — | CN | claimed |
| CN-112126064-A | Preparation method of novel solid silicon carbide ceramic precursor | 长沙科航特种织造有限公司 | 2020-12-25 | — | — | CN | claimed |
| CN-112094414-A | Preparation method of novel liquid silicon carbide ceramic precursor | 宁波曙翔新材料股份有限公司 | 2020-12-18 | — | — | CN | claimed |
| CN-111925386-A | Preparation method of novel silicon carbide ceramic precursor | 长沙科航特种织造有限公司 | 2020-11-13 | — | — | CN | claimed |
| CN-120153318-A | Photosensitive resin composition, method for producing cured relief pattern using same, and method for producing polyimide film | 旭化成株式会社 | 2025-06-13 | — | — | CN | disclosed |
| CN-112334833-B | Negative photosensitive resin composition, polyimide using same, and method for producing cured relief pattern | 旭化成株式会社 | 2024-09-24 | — | — | CN | disclosed |
| CN-116075368-B | Resin composition, cured product, method for producing same, and laminate | 三菱化学株式会社 | 2024-06-11 | — | — | CN | disclosed |
| US-11912889-B2 | Silicon-containing polymer, film-forming composition, method for forming silicon-containing polymer coating, method for forming silica coating, and production method for silicon-containing polymer | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| CN-116710498-A | Polyimide precursor resin composition and method for producing same | 旭化成株式会社 | 2023-09-05 | — | — | CN | disclosed |
| US-20230257503-A1 | RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE | MITSUBISHI CHEMICAL CORPORATION (JP) | 2023-08-17 | — | — | US | disclosed |
| EP-4212256-A1 | RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE | Mitsubishi Chemical Corporation (JP) | 2023-07-19 | — | — | EP | disclosed |
| EP-1566836-A1 | SEMICONDUCTOR MULTILAYER INTERCONNECTION FORMING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2005-08-24 | — | — | EP | disclosed |
| US-20050112383-A1 | Undercoating layer material for lithography and wiring forming method using the same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2005-05-26 | — | — | US | disclosed |
| US-20050074695-A1 | Undercoating material for wiring, embedded material, and wiring formation method | TOKYO OHKA KOGYO CO., LTD. (JP) | 2005-04-07 | — | — | US | disclosed |
| WO-2004113486-A1 | CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2004-12-29 | — | — | WO | disclosed |
| US-20040259761-A1 | Cleaning composition, method of cleaning semiconductor substrate, and method of forming wiring on semiconductor substrate | TOKYO OHKA KOGYO CO., LTD. INTEL CORPORATION | 2004-12-23 | — | — | US | disclosed |
| US-20040121937-A1 | Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith | TOKYO OHKA KOGYO CO., LTD. (JP) | 2004-06-24 | — | — | US | disclosed |
| US-6515073-B2 | Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns | TOKYO OHKA KOGYO CO., LTD. (JP) | 2003-02-04 | — | — | US | disclosed |
| US-20010036998-A1 | Anti-reflective coating-forming composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2001-11-01 | — | — | US | disclosed |