SCHEMBL21402802

SCHEMBL21402802

CCO[Si](CCC(CC(=O)O)C(=O)O)(OCC)OCC

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
FOLH1 Q04609 3/20 0.47
TDP1 Q9NUW8 2/20 0.38
CHRM1 P11229 1/20 0.38
AKR1A1 P14550 1/20 0.38
CHRM3 P20309 1/20 0.38
HTR2A P28223 1/20 0.38
HTR2C P28335 1/20 0.38
ADRA1A P35348 1/20 0.38
HRH1 P35367 1/20 0.38
DRD3 P35462 1/20 0.38
SLC6A3 Q01959 1/20 0.38
HDAC1 Q13547 1/20 0.38
HDAC2 Q92769 1/20 0.38
CPA1 P15085 2/20 0.33
CA2 P00918 1/20 0.33
MAPK1 P28482 1/20 0.33
CPB1 P15086 1/20 0.33
CPA3 P15088 1/20 0.33
CPB2 Q96IY4 1/20 0.33
GPR84 Q9NQS5 4/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL475633 0.90 FOLH1 (0.44) FOLH1TDP1CHRM1AKR1A1CHRM3
SCHEMBL21066650 0.88 FOLH1 (0.43) FOLH1TDP1CHRM1AKR1A1CHRM3
SCHEMBL767600 0.88 FOLH1 (0.43) FOLH1TDP1CHRM1AKR1A1CHRM3
SCHEMBL21066700 0.87 FOLH1 (0.42) FOLH1TDP1CHRM1AKR1A1CHRM3
SCHEMBL21066696 0.87 FOLH1 (0.42) FOLH1TDP1CHRM1AKR1A1CHRM3
SCHEMBL8517431 0.85 CA2 (0.48) TDP1CHRM1AKR1A1CHRM3HTR2A
SCHEMBL21402799 0.84 FOLH1 (0.46) FOLH1TDP1CHRM1AKR1A1CHRM3
SCHEMBL8815087 0.81 FOLH1 (0.41) FOLH1TDP1CHRM1AKR1A1CHRM3
SCHEMBL21066685 0.81 FOLH1 (0.50) FOLH1TDP1CHRM1AKR1A1CHRM3
SCHEMBL1991862 0.81 TDP1 (0.48) TDP1GPR84

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109716491-B Method for manufacturing field effect transistor and method for manufacturing wireless communication device 东丽株式会社 2023-06-09 CN disclosed
CN-111095566-B Field effect transistor, method of manufacturing the same, wireless communication device using the same, and merchandise tag 东丽株式会社 2023-05-23 CN disclosed
US-10790461-B2 Field-effect transistor, method for manufacturing the same, and wireless communication device and goods tag including the same TORAY INDUSTRIES, INC. (JP) 2020-09-29 US disclosed
EP-3547383-B1 FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING SAME, WIRELESS COMMUNICATION DEVICE USING SAME AND ARTICLE TAG TORAY INDUSTRIES (JP) 2020-06-24 EP disclosed
CN-109964327-B Field-effect transistor, method for manufacturing same, wireless communication device using same, and commodity label 东丽株式会社 2020-05-19 CN disclosed
EP-3547383-A1 FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING SAME, WIRELESS COMMUNICATION DEVICE USING SAME AND ARTICLE TAG Toray Industries, Inc. (JP) 2019-10-02 EP disclosed
CN-109716491-A The manufacturing method of field effect transistor and the manufacturing method of wireless telecom equipment 东丽株式会社 2019-05-03 CN disclosed