Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | EPHX2 | P34913 | 3/20 | 0.35 |
| ▸ | TSHR | P16473 | 3/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.32 |
| ▸ | MEN1 | O00255 | 1/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.31 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14580043 | 0.96 | EPHX2 (0.35) | EPHX2TSHRALDH1A1MEN1KMT2A | |
| SCHEMBL14272252 | 0.90 | MEN1 (0.35) | EPHX2TSHRALDH1A1MEN1KMT2A | |
| SCHEMBL14523963 | 0.88 | EPHX2 (0.34) | EPHX2TSHRALDH1A1MEN1KMT2A | |
| SCHEMBL14580049 | 0.87 | THRB (0.41) | EPHX2TSHRALDH1A1 | |
| SCHEMBL13171802 | 0.86 | CYP4F2 (0.31) | EPHX2ALDH1A1 | |
| SCHEMBL4401855 | 0.86 | TSHR (0.41) | EPHX2TSHRALDH1A1 | |
| SCHEMBL4401860 | 0.85 | TSHR (0.43) | EPHX2TSHR | |
| SCHEMBL4403811 | 0.85 | TSHR (0.43) | EPHX2TSHR | |
| SCHEMBL4399200 | 0.85 | TSHR (0.43) | EPHX2TSHR | |
| SCHEMBL14523965 | 0.85 | EPHX2 (0.34) | EPHX2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 66 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20060121390-A1 | High resolution resists for next generation lithographies | NATIONAL SCIENCE FOUNDATION | 2006-06-08 | — | — | US | claimed |
| US-20250189896-A1 | RESIST UNDERLAYER FILM FORMATION COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2025-06-12 | — | — | US | disclosed |
| US-20250136734-A1 | PROTECTIVE-FILM FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2025-05-01 | — | — | US | disclosed |
| CN-118742856-A | Composition for forming protective film | 日产化学株式会社 | 2024-10-01 | — | — | CN | disclosed |
| WO-2023162653-A1 | RESIST UNDERLAYER FILM FORMATION COMPOSITION | 日産化学株式会社 | 2023-08-31 | — | — | WO | disclosed |
| WO-2023157772-A1 | PROTECTIVE FILM FORMING COMPOSITION | 日産化学株式会社 | 2023-08-24 | — | — | WO | disclosed |
| US-11592747-B2 | Resist underlayer film-forming composition comprising carbonyl-containing polyhydroxy aromatic ring novolac resin | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2023-02-28 | — | — | US | disclosed |
| US-11199777-B2 | Resist underlayer film-forming composition containing novolac polymer having secondary amino group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2021-12-14 | — | — | US | disclosed |
| CN-104412163-B | Method for manufacturing semiconductor device using composition for forming organic underlayer film for solvent development lithography process | 日产化学工业株式会社 | 2020-05-22 | — | — | CN | disclosed |
| US-20160326396-A1 | RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING NOVOLAC POLYMER HAVING SECONDARY AMINO GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-11-10 | — | — | US | disclosed |
| US-20070083021-A1 | Fluorocopolymer, method for its production and resist composition containing it | ASAHI GLASS COMPANY, LIMITED (JP) | 2007-04-12 | — | — | US | disclosed |
| US-7195856-B2 | Positive resist composition and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2007-03-27 | — | — | US | disclosed |
| US-7175963-B2 | Chemical amplification type positive resist composition and a resin therefor | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-02-13 | — | — | US | disclosed |
| US-7175963-B2 | Chemical amplification type positive resist composition and a resin therefor | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-02-13 | — | — | US | disclosed |
| US-20060234156-A1 | Composition for formation of underlayer film for lithography containing epoxy compound and carboxylic acid compound | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2006-10-19 | — | — | US | disclosed |
| US-20060210915-A1 | Composition for forming lower layer film for lithography comprising compound having protected carboxyl group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2006-09-21 | — | — | US | disclosed |
| US-20060121390-A1 | High resolution resists for next generation lithographies | NATIONAL SCIENCE FOUNDATION | 2006-06-08 | — | — | US | disclosed |
| EP-1662769-A1 | COMPOSITION FOR FORMING LOWER LAYER FILM FOR LITHOGRAPHY COMPRISING COMPOUND HAVING PROTECTED CARBOXYL GROUP | Nissan Chemical Industries, Ltd. (JP) | 2006-05-31 | — | — | EP | disclosed |
| EP-1617289-A1 | COMPOSITION FOR FORMATION OF UNDERLAYER FILM FOR LITHOGRAPHY CONTAINING EPOXY COMPOUND AND CARBOXYLIC ACID COMPOUND | Nissan Chemical Industries, Ltd. (JP) | 2006-01-18 | — | — | EP | disclosed |
| WO-2003104182-A1 | 2-ALKOXYALKYL-2-ADAMANTYL (METH)ACRYLATE AND METHOD FOR PREPARING SAME | ENF TECHNOLOGY CO., LTD. (KR) | 2003-12-18 | — | — | WO | disclosed |