⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6040017 | 0.82 | — | — | |
| SCHEMBL4620206 | 0.82 | — | — | |
| SCHEMBL237688 | 0.82 | — | — | |
| SCHEMBL1335345 | 0.82 | — | — | |
| SCHEMBL30312582 | 0.71 | — | — | |
| Water SCHEMBL28852215 | 0.71 | — | — | |
| SCHEMBL27717729 | 0.71 | — | — | |
| SCHEMBL29538745 | 0.71 | — | — | |
| SCHEMBL35987 | 0.50 | — | — | |
| SCHEMBL1536205 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 842 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260117416-A1 | Process for Depositing Scandium Nitride by Atomic Layer Deposition Techniques | KURT J LESKER COMPANY (US) | 2026-04-30 | — | — | US | claimed |
| EP-4732327-A1 | A SEMICONDUCTOR STRUCTURE | IQE plc (GB) | 2026-04-29 | — | — | EP | claimed |
| US-20260076116-A1 | DIFFUSION SUPPRESSION IN HIGH-TEMPERATURE ANNEALING OF NITRIDES | THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY (US) | 2026-03-12 | — | — | US | claimed |
| US-12545976-B2 | Aluminum-scandium composite, aluminum-scandium composite sputtering target and methods of making | Materion Corporation (US) | 2026-02-10 | — | — | US | claimed |
| US-12515945-B2 | Thin films and methods of fabrication thereof | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 2026-01-06 | — | — | US | claimed |
| US-12512137-B2 | Multilayered vertical spin-orbit torque devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-12-30 | — | — | US | claimed |
| US-20250362746-A1 | SKIN-ATTACHABLE SENSOR SYSTEM AND METHOD FOR TRACKING EYE MOVEMENT AND POSITION | UNIVERSITY OF HOUSTON SYSTEM (US) | 2025-11-27 | — | — | US | claimed |
| US-12484232-B2 | Ferroelectric memory device and method of fabricating the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-25 | — | — | US | claimed |
| US-12454491-B2 | Nitride piezoelectric body and MEMS device using same | NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) | 2025-10-28 | — | — | US | claimed |
| US-20250294772-A1 | FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-09-18 | — | — | US | claimed |
| EP-0615952-A2 | Composite ultrafine particles of aluminum nitride and rare earth nitride, method for production and sintered article thereof | YKK CORPORATION (JP) | 1994-09-21 | — | — | EP | claimed |
| US-5314364-A | Scandate cathode and methods of making it | U.S. PHILIPS CORPORATION (US) | 1994-05-24 | — | — | US | claimed |
| CN-1051820-A | SCANDATE CATHODE | PHILIPS NV (NL) | 1991-05-29 | — | — | CN | claimed |
| EP-0428206-A1 | Scandate cathode | Koninklijke Philips Electronics N.V. (NL) | 1991-05-22 | — | — | EP | claimed |
| EP-0209648-B1 | WAFER BASE FOR SILICON CARBIDE SEMICONDUCTOR DEVICE | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 1990-03-07 | — | — | EP | claimed |
| US-4767666-A | SINGLE CRYSTAL SILICON CARBIDE OVERCOATING SUBSTRATE | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 1988-08-30 | — | — | US | claimed |
| EP-0222908-A1 | WAFER BASE FOR SILICON CARBIDE SEMICONDUCTOR DEVICE | Hughes Aircraft Company (US) | 1987-05-27 | — | — | EP | claimed |
| EP-0209648-A1 | Wafer base for silicon carbide semiconductor device | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 1987-01-28 | — | — | EP | claimed |
| WO-1986007194-A1 | WAFER BASE FOR SILICON CARBIDE SEMICONDUCTOR DEVICE | HUGHES AIRCRAFT COMPANY (US) | 1986-12-04 | — | — | WO | claimed |
| US-4126807-A | Gas discharge display device containing source of lanthanum series material in dielectric layer of envelope structure | OWENS-ILLINOIS, INC. (US) | 1978-11-21 | — | — | US | claimed |