⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL19434157 | 0.87 | — | — | |
| SCHEMBL8849452 | 0.82 | — | — | |
| SCHEMBL16037 | 0.82 | — | — | |
| SCHEMBL18886767 | 0.82 | — | — | |
| SCHEMBL7973038 | 0.82 | — | — | |
| SCHEMBL10578755 | 0.82 | — | — | |
| SCHEMBL4865213 | 0.82 | — | — | |
| SCHEMBL214749 | 0.82 | — | — | |
| SCHEMBL2241382 | 0.67 | — | — | |
| SCHEMBL2409388 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1681 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118345510-A | Epitaxial wafer and preparation method thereof | 中环领先半导体科技股份有限公司 | 2024-07-16 | — | — | CN | claimed |
| CN-118019434-B | Method for reducing breakage rate of piezoelectric film of silicon substrate | 济南大学 | 2024-07-16 | — | — | CN | claimed |
| WO-2024148301-A1 | IMPLANTABLE FLUID FLOW AND ACOUSTIC SENSOR | CANARY MEDICAL SWITZERLAND AG (CH) | 2024-07-11 | — | — | WO | claimed |
| US-12032062-B2 | Obstacle detection apparatus | DENSO CORPORATION (JP) | 2024-07-09 | — | — | US | claimed |
| EP-4393015-A2 | SEMICONDUCTOR HETEROSTRUCTURES WITH SCANDIUM III-NITRIDE LAYER | The Regents Of The University Of Michigan (US) | 2024-07-03 | — | — | EP | claimed |
| CN-118281534-A | Gradual change bulk acoustic wave excitation broadband magnetoelectric antenna and preparation method thereof | 北京工业大学 | 2024-07-02 | — | — | CN | claimed |
| US-20240213030-A1 | Method of Plasma Etching | SPTS TECHNOLOGIES LIMITED (GB) | 2024-06-27 | — | — | US | claimed |
| EP-4391023-A1 | METHOD OF PLASMA ETCHING | SPTS Technologies Limited (GB) | 2024-06-26 | — | — | EP | claimed |
| CN-118248542-A | Plasma etching method | SPTS科技有限公司 | 2024-06-25 | — | — | CN | claimed |
| CN-118248533-A | Preparation method of diamond-based nitride semiconductor heterostructure | 北京大学 | 2024-06-25 | — | — | CN | claimed |
| US-20160013397-A1 | MAGNETORESISTIVE EFFECT ELEMENT | TOSHIBA MEMORY CORPORATION (JP) | 2016-01-14 | — | — | US | claimed |
| US-20150381144-A1 | BULK ACOUSTIC RESONATOR COMPRISING ALUMINUM SCANDIUM NITRIDE | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED (SG) | 2015-12-31 | — | — | US | claimed |
| WO-2015161257-A1 | PIEZOELECTRIC MEMS RESONATOR WITH INTEGRATED PHASE CHANGE MATERIAL SWITCHES | NORTHEASTERN UNIVERISTY (US) | 2015-10-22 | — | — | WO | claimed |
| US-9154111-B2 | Double bulk acoustic resonator comprising aluminum scandium nitride | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. (SG) | 2015-10-06 | — | — | US | claimed |
| US-20150280687-A1 | ACOUSTIC RESONATOR COMPRISING ACOUSTIC REDISTRIBUTION LAYERS AND LATERAL FEATURES | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED (SG) | 2015-10-01 | — | — | US | claimed |
| US-20150280100-A1 | ACOUSTIC RESONATOR COMPRISING ACOUSTIC REDISTRIBUTION LAYERS | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. (SG) | 2015-10-01 | — | — | US | claimed |
| US-20140174908-A1 | SCANDIUM-ALUMINUM ALLOY SPUTTERING TARGETS | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. (SG) | 2014-06-26 | — | — | US | claimed |
| US-20140175950-A1 | ACOUSTIC RESONATOR COMPRISING ALUMINUM SCANDIUM NITRIDE AND TEMPERATURE COMPENSATION FEATURE | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. (SG) | 2014-06-26 | — | — | US | claimed |
| US-20130176086-A1 | DOUBLE BULK ACOUSTIC RESONATOR COMPRISING ALUMINUM SCANDIUM NITRIDE | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. (SG) | 2013-07-11 | — | — | US | claimed |
| US-20120000766-A1 | METHOD FOR MANUFACTURING SCANDIUM ALUMINUM NITRIDE FILM | DENSO CORPORATION (JP) | 2012-01-05 | — | — | US | claimed |