SCHEMBL215227

SCHEMBL215227

CCCCOC(COC(C)=O)OCC

nearest known ligand 0.53

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.53
LMNA P02545 2/20 0.40
HSD17B10 Q99714 1/20 0.40
TSHR P16473 5/20 0.38
ATM Q13315 1/20 0.37
HPGD P15428 2/20 0.35
PRKCA P17252 3/20 0.35
TDP1 Q9NUW8 1/20 0.34
FAAH O00519 1/20 0.34
ESR1 P03372 1/20 0.34
CYP1A2 P05177 1/20 0.34
CYP2D6 P10635 1/20 0.34
MAPK1 P28482 1/20 0.34
CYP2C19 P33261 1/20 0.34
NR1H2 P55055 1/20 0.34
RNASEL Q05823 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34
RECQL P46063 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28332117 0.94 ALDH1A1 (0.59) ALDH1A1LMNAHSD17B10TSHRATM
SCHEMBL9490594 0.88 ALDH1A1 (0.52) ALDH1A1LMNAHSD17B10TSHRATM
SCHEMBL5662944 0.87 ALDH1A1 (0.52) ALDH1A1LMNAHSD17B10TSHRHPGD
Ethylene Glycol SCHEMBL28183171 0.86 ALDH1A1 (0.50) ALDH1A1LMNAHSD17B10TSHRATM
SCHEMBL7389478 0.86 ALDH1A1 (0.53) ALDH1A1LMNAHSD17B10TSHRATM
SCHEMBL10576468 0.84 ALDH1A1 (0.41) ALDH1A1LMNAHSD17B10TSHRPRKCA
SCHEMBL562350 0.83 MAPT (0.51) ALDH1A1LMNATSHRATMPRKCA
SCHEMBL8894699 0.81 ALDH1A1 (0.36) ALDH1A1LMNATSHRATMHPGD
SCHEMBL28398031 0.81 ALDH1A1 (0.45) ALDH1A1LMNATSHRATMHPGD
SCHEMBL13224996 0.79 ALDH1A1 (0.59) ALDH1A1LMNAHSD17B10TSHRATM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 128 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160293289-A1 METHOD FOR STRUCTURING A TRANSPARENT CONDUCTIVE MATRIX COMPRISING NANO MATERIALS MERCK PATENT GMBH (DE) 2016-10-06 US claimed
US-9379326-B2 Selective etching of a matrix comprising silver nano wires MERCK PATENT GMBH (DE) 2016-06-28 US claimed
US-20150152328-A1 PHOTOACTIVATED ETCHING PASTE AND ITS USE MERCK PATENT GMBH (DE) 2015-06-04 US claimed
WO-2015067339-A1 METHOD FOR STRUCTURING A TRANSPARENT CONDUCTIVE MATRIX COMPRISING SILVER NANO MATERIALS MERCK PATENT GMBH (DE) 2015-05-14 WO claimed
EP-2856519-A1 PHOTOACTIVATED ETCHING PASTE AND ITS USE Merck Patent GmbH (DE) 2015-04-08 EP claimed
EP-2572388-B1 SELECTIVELY ETCHING OF A CARBON NANO TUBES (CNT) POLYMER MATRIX ON A PLASTIC SUBSTRUCTURE MERCK PATENT GMBH (DE) 2015-01-07 EP claimed
EP-2099877-B1 ETCHING PASTE CONTAINING PARTICLES FOR SILICON SURFACES AND LAYERS MERCK PATENT GMBH (DE) 2014-11-26 EP claimed
US-20140291287-A1 SELECTIVE ETCHING OF A MATRIX COMPRISING SILVER NANO WIRES MERCK PATENT GMBH (DE) 2014-10-02 US claimed
CN-101208277-B Etching medium for oxide transparent conductive layer MERCK PATENT GMBH 2014-09-24 CN claimed
EP-2771919-A1 SELECTIVE ETCHING OF A MATRIX COMPRISING SILVER NANO WIRES Merck Patent GmbH (DE) 2014-09-03 EP claimed
US-8088297-B2 for the etching of passivation and antireflection layers of SiO2 and doping of Si on solar cells containing H3PO4 or ammonium phosphate, applying printable paste in a single step over entire surface or selective surface regions to be etched; hydrogen fluoride/fluoride free etching; eco-friendly MERCK PATENT GMBH (DE) 2012-01-03 US claimed
WO-2011144292-A2 SELECTIVELY ETCHING OF A CARBON NANO TUBES (CNT) POLYMER MATRIX ON A PLASTIC SUBSTRUCTURE MERCK PATENT GMBH (DE) 2011-11-24 WO claimed
EP-1535318-B1 ETCHING PASTES FOR SILICON SURFACES AND LAYERS MERCK PATENT GMBH (DE) 2011-06-08 EP claimed
US-7837890-B2 Printable medium for the etching of silicon dioxide and silicon nitride layers MERCK PATENT GMBH (DE) 2010-11-23 US claimed
US-20100068889-A1 PARTICLE-CONTAINING ETCHING PASTES FOR SILICON SURFACES AND LAYERS MERCK PATENT GMBH (DE) 2010-03-18 US claimed
US-20080210660-A1 Medium For Etching Oxidic, Transparent, Conductive Layers MERCK PATENT GESELLSCHAFT (DE) 2008-09-04 US claimed
US-20080200036-A1 Printable Etching Media For Silicon Dioxide and Silicon Nitride Layers MERCK PATENT GMBH (DE) 2008-08-21 US claimed
US-20080121621-A1 Printable Medium for the Etching of Silicon Dioxide and Silicon Nitride Layers MERCK PATENT GMBH (DE) 2008-05-29 US claimed
US-20050247674-A1 Etching pastes for silicon surfaces and layers MERCK PATENT GMBH (DE) 2005-11-10 US claimed
US-20030160026-A1 Etching pastes for inorganic surfaces MERCK PATENT GMBH (DE) 2003-08-28 US claimed