SCHEMBL216271

SCHEMBL216271

O=C1C=[C]c2ccccc21

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAOA P21397 5/20 0.42
IDO1 P14902 4/20 0.42
CDC25B P30305 3/20 0.42
MAOB P27338 3/20 0.42
SNCA P37840 2/20 0.42
EHMT2 Q96KQ7 2/20 0.42
AKT1 P31749 1/20 0.42
MAP2K1 Q02750 1/20 0.42
PIN1 Q13526 1/20 0.42
NSD1 Q96L73 1/20 0.42
EHMT1 Q9H9B1 1/20 0.42
MEN1 O00255 5/20 0.39
KMT2A Q03164 5/20 0.39
MAPT P10636 5/20 0.38
MAPK1 P28482 5/20 0.38
LMNA P02545 4/20 0.38
KDM4E B2RXH2 3/20 0.38
PTPRC P08575 3/20 0.38
POLB P06746 3/20 0.38
RECQL P46063 3/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL415465 0.86 MEN1 (0.42) MAOAIDO1CDC25BMAOBSNCA
SCHEMBL8366579 0.78 CDC25B (0.32) MAOAIDO1CDC25BMAOBSNCA
SCHEMBL223194 0.75 IDO1 (0.48) MAOAIDO1CDC25BMAOBSNCA
SCHEMBL10522276 0.67 CDC25B (0.50) MAOAIDO1CDC25BMAOBSNCA
SCHEMBL577831 0.63 CDC25B (0.58) MAOAIDO1CDC25BMAOBSNCA
SCHEMBL110858 0.61
SCHEMBL624689 0.60 MEN1 (0.39) MAOAIDO1CDC25BMAOBSNCA
Naphthoquinone SCHEMBL11359780 0.60 IDO1 (1.00) MAOAIDO1CDC25BMAOBSNCA
SCHEMBL102781 0.60 MEN1 (0.37) MAOAIDO1CDC25BMAOBSNCA
Naphthoquinone SCHEMBL29354680 0.60 IDO1 (1.00) MAOAIDO1CDC25BMAOBSNCA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 62 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9568824-B2 Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2017-02-14 US disclosed
US-9557643-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device using the same and electronic device FUJIFILM CORPORATION (JP) 2017-01-31 US disclosed
EP-2413191-B1 Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith FUJIFILM CORP (JP) 2016-09-07 EP disclosed
US-9429840-B2 Pattern forming method, composition used therein, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-08-30 US disclosed
US-9223208-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-12-29 US disclosed
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-20150118627-A1 PATTERN FORMING METHOD, COMPOSITION USED TEHREIN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-04-30 US disclosed
US-9005870-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-04-14 US disclosed
US-20140349224-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-11-27 US disclosed
US-8808961-B2 Composition, resist film, pattern forming method, and inkjet recording method FUJIFILM CORPORATION (JP) 2014-08-19 US disclosed
EP-1367439-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2003-12-03 EP disclosed
US-6602646-B1 Acid generator and copolymer resin having alkali soluble and alicyclic hydrocarbon moieties; eliminates edge roughness on pattern FUJI PHOTO FILM CO., LTD. (JP) 2003-08-05 US disclosed
US-6596458-B1 Used in an ultramicrolithography process or another photofabrication process for the production of very large scale integrated circuits or high capacity microchips FUJI PHOTO FILM CO., LTD. (JP) 2003-07-22 US disclosed
US-6576392-B1 A photoacid gererator, a resin containing a sulfonate group, and a compound containing a sulfonate group which decomposes by the action of an acid to generate a sulfonic acid FUJI PHOTO FILM CO., LTD. (JP) 2003-06-10 US disclosed
US-20030073029-A1 Positive-working resist composition FUJI PHOTO FILM CO., LTD. 2003-04-17 US disclosed
US-20030044715-A1 Positive photoresist composition FUJI PHOTO FILM CO., LTD. 2003-03-06 US disclosed
US-20030031950-A1 A compound capable of generating an acid upon irradiation; a resin capable of decomposing by the action of an acid to increase the solubility; and a specified dissolution-inhibiting compound. FUJI PHOTO FILM CO., LTD 2003-02-13 US disclosed
US-20030008241-A1 Positive-working resist composition FUJI PHOTO FILM CO., LTD. 2003-01-09 US disclosed
US-6479211-B1 FOR FAR ULTRAVIOLET EXPOSURE, WHICH CAN FORM A HIGHLY PRECISE PATTERN USING LIGHT IN THE FAR ULTRAVIOLET REGION INCLUDING AN EXCIMER LASER RAY, PARTICULARLY, IN THE REGION OF 250 NM OR LESS FUJI PHOTO FILM CO., LTD. (JP) 2002-11-12 US disclosed
EP-1091248-A1 Postive-working resist composition FUJI PHOTO FILM CO., LTD. (JP) 2001-04-11 EP disclosed