⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11877663 | 0.75 | — | — | |
| SCHEMBL3170875 | 0.75 | — | — | |
| SCHEMBL11655088 | 0.75 | — | — | |
| Lithium Ion SCHEMBL555214 | 0.75 | — | — | |
| Potassium Ion SCHEMBL6403371 | 0.75 | — | — | |
| SCHEMBL7055335 | 0.75 | — | — | |
| SCHEMBL2163365 | 0.75 | — | — | |
| SCHEMBL13279661 | 0.75 | — | — | |
| Lithium Ion SCHEMBL11877317 | 0.67 | — | — | |
| Potassium Ion SCHEMBL11659725 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20110180905-A1 | GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRYSTALLINITY | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2011-07-28 | — | — | US | claimed |
| WO-2009152108-A2 | GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRISTALLINITY | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2009-12-17 | — | — | WO | claimed |
| US-20110180905-A1 | GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRYSTALLINITY | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2011-07-28 | — | — | US | disclosed |
| WO-2009152108-A2 | GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRISTALLINITY | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2009-12-17 | — | — | WO | disclosed |