SCHEMBL21659433

SCHEMBL21659433

CC(C)CC(C)(C(=O)Oc1ccc2ccccc2c1)C(C)C

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ KMT2A Q03164 4/20 0.44
▸ MEN1 O00255 3/20 0.44
▸ MAPT P10636 1/20 0.44
▸ TDP1 Q9NUW8 1/20 0.44
▸ PPARG P37231 3/20 0.42
▸ PPARA Q07869 3/20 0.42
▸ PTPN7 P35236 1/20 0.41
▸ ALDH1A1 P00352 2/20 0.40
▸ L3MBTL1 Q9Y468 1/20 0.40
▸ HSD17B10 Q99714 1/20 0.40
▸ RECQL P46063 1/20 0.40
▸ BCHE P06276 1/20 0.40
▸ RAB9A P51151 2/20 0.40
▸ SMN1; SMN2 Q16637 2/20 0.40
▸ GAA P10253 1/20 0.40
▸ NPC1 O15118 1/20 0.39
▸ CASP3 P42574 1/20 0.39
▸ SENP8 Q96LD8 1/20 0.39
▸ SENP7 Q9BQF6 1/20 0.39
▸ SENP6 Q9GZR1 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12970247 0.89 KMT2A (0.42) KMT2AMEN1MAPTHSD17B10NPC1
SCHEMBL23864896 0.87 PPARG (0.46) KMT2AMEN1MAPTTDP1PPARG
SCHEMBL25521008 0.82 GAA (0.39) PPARGPPARAPTPN7RECQLRAB9A
SCHEMBL19954365 0.82 CYP1A2 (0.45) KMT2AMEN1MAPTPPARGPPARA
SCHEMBL19901519 0.81 POLB (0.44) KMT2AMEN1ALDH1A1RAB9AGAA
SCHEMBL19954364 0.81 ELANE (0.49) KMT2AMEN1ALDH1A1BCHEKDM4E
SCHEMBL25521135 0.80 ELANE (0.40) KMT2AMEN1MAPTTDP1PPARG
SCHEMBL18487391 0.78 MAPT (0.45) KMT2AMEN1MAPTTDP1ALDH1A1
SCHEMBL21251186 0.77 MAPK1 (0.48) KMT2AMAPTHSD17B10
SCHEMBL23808373 0.77 ELANE (0.51) KMT2AMEN1ALDH1A1ESR1ESR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20210397098-A1 CHEMICAL LIQUID, RINSING SOLUTION, AND RESIST PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2021-12-23 — — US disclosed
US-20210011377-A1 PHOTOSENSITIVE COMPOSITION FOR EUV LIGHT, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2021-01-14 — — US disclosed
US-10551739-B2 Resist composition, and resist film, pattern forming method, and method for manufacturing electronic device, each using resist composition FUJIFILM CORPORATION (JP) 2020-02-04 — — US disclosed
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