SCHEMBL21828516

SCHEMBL21828516

CCCCN[Si](CC)(CC)CC

nearest known ligand 0.41

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
TSHR P16473 4/20 0.41
ALDH1A1 P00352 1/20 0.36
CA1 P00915 2/20 0.36
CA2 P00918 2/20 0.36
ADH1B P00325 1/20 0.36
ADH1C P00326 1/20 0.36
ADH1A P07327 1/20 0.36
ADH7 P40394 1/20 0.36
CA12 O43570 1/20 0.36
CA7 P43166 1/20 0.36
CA14 Q9ULX7 1/20 0.36
EPHX1 P07099 3/20 0.33
LMNA P02545 1/20 0.33
ALOX15 P16050 1/20 0.32
THRB P10828 1/20 0.32
DNM1 Q05193 3/20 0.30
SMN1; SMN2 Q16637 1/20 0.30
ACHE P22303 1/20 0.30
MMP2 P08253 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27104136 0.89 EPHX1 (0.48) TSHRALDH1A1ADH1BADH1CADH1A
SCHEMBL28659266 0.89 EPHX1 (0.48) TSHRALDH1A1ADH1BADH1CADH1A
SCHEMBL28648780 0.89 EPHX1 (0.48) TSHRALDH1A1ADH1BADH1CADH1A
SCHEMBL28671496 0.89 EPHX1 (0.48) TSHRALDH1A1ADH1BADH1CADH1A
SCHEMBL28649716 0.89 EPHX1 (0.48) TSHRALDH1A1ADH1BADH1CADH1A
SCHEMBL28659270 0.89 EPHX1 (0.48) TSHRALDH1A1ADH1BADH1CADH1A
SCHEMBL28659093 0.89 EPHX1 (0.48) TSHRALDH1A1ADH1BADH1CADH1A
SCHEMBL28669049 0.89 EPHX1 (0.48) TSHRALDH1A1ADH1BADH1CADH1A
SCHEMBL15309854 0.81 ADH1B (0.30) CA1ADH1BADH1AADH7
SCHEMBL27667703 0.80 TSHR (0.39) TSHRALDH1A1CA1CA2ADH1B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3844319-A1 COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS Versum Materials US, LLC (US) 2021-07-07 EP claimed
WO-2020072768-A1 COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC (US) 2020-04-09 WO claimed
US-20240030026-A1 PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROCESSING APPARATUS, AND RECORDING MEDIUM Kokusai Electric Corporation (JP) 2024-01-25 US disclosed
CN-117121172-A Method for manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and program 株式会社国际电气 2023-11-24 CN disclosed
CN-112955476-B Process for the preparation of polyethylene SABIC环球技术有限责任公司 2023-05-12 CN disclosed
WO-2022264430-A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM 株式会社KOKUSAI ELECTRIC 2022-12-22 WO disclosed
CN-112955476-A Process for the preparation of polyethylene SABIC环球技术有限责任公司 2021-06-11 CN disclosed