Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ESR1 | P03372 | 12/20 | 1.00 |
| ▸ | ESR2 | Q92731 | 8/20 | 0.54 |
| ▸ | AR | P10275 | 3/20 | 0.54 |
| ▸ | MAPT | P10636 | 4/20 | 0.42 |
| ▸ | LMNA | P02545 | 3/20 | 0.42 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.42 |
| ▸ | ALOX15 | P16050 | 3/20 | 0.42 |
| ▸ | MEN1 | O00255 | 3/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.42 |
| ▸ | HIF1A | Q16665 | 2/20 | 0.42 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.42 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.42 |
| ▸ | PGR | P06401 | 2/20 | 0.42 |
| ▸ | CHRM2 | P08172 | 2/20 | 0.42 |
| ▸ | ADORA3 | P0DMS8 | 2/20 | 0.42 |
| ▸ | CYP2D6 | P10635 | 2/20 | 0.42 |
| ▸ | CHRM1 | P11229 | 2/20 | 0.42 |
| ▸ | CYP2C9 | P11712 | 2/20 | 0.42 |
| ▸ | DRD1 | P21728 | 2/20 | 0.42 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16537645 | 0.81 | ESR1 (0.68) | ESR1ESR2ARMAPTLMNA | |
| SCHEMBL2622739 | 0.77 | ESR1 (0.62) | ESR1ESR2ARMAPTLMNA | |
| Hydroquinone SCHEMBL11180188 | 0.73 | LMNA (0.67) | ESR1ESR2ARMAPTLMNA | |
| Hydroquinone SCHEMBL3095350 | 0.73 | LMNA (0.67) | ESR1ESR2ARMAPTLMNA | |
| Hydroquinone SCHEMBL6071932 | 0.73 | LMNA (0.67) | ESR1ESR2ARMAPTLMNA | |
| SCHEMBL2444645 | 0.72 | ESR1 (0.56) | ESR1ESR2ARMAPTLMNA | |
| SCHEMBL21722327 | 0.72 | ESR1 (0.56) | ESR1ESR2AR | |
| Propane SCHEMBL11439349 | 0.71 | ESR1 (0.73) | ESR1ESR2ARMAPTLMNA | |
| Propane SCHEMBL11499965 | 0.71 | ESR1 (0.73) | ESR1ESR2ARMAPTLMNA | |
| Propane SCHEMBL9293116 | 0.71 | ESR1 (0.73) | ESR1ESR2ARMAPTLMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 59 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1788433-B1 | Silicon-containing film forming composition and substrate processing method | SHINETSU CHEMICAL CO (JP) | 2014-07-09 | — | — | EP | disclosed |
| US-8349533-B2 | Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-08 | — | — | US | disclosed |
| US-8313890-B2 | Antireflective coating composition, antireflective coating, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-11-20 | — | — | US | disclosed |
| US-8288072-B2 | Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-16 | — | — | US | disclosed |
| US-8088554-B2 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2012-01-03 | — | — | US | disclosed |
| US-7910283-B2 | Silicon-containing antireflective coating forming composition, silicon-containing antireflective coating, substrate processing intermediate, and substrate processing method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-03-22 | — | — | US | disclosed |
| US-7879530-B2 | Antireflective coating composition, antireflective coating, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-02-01 | — | — | US | disclosed |
| US-7871761-B2 | Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-18 | — | — | US | disclosed |
| US-7745104-B2 | Polymer having a hydrocarbon chain backbone and containing units derived from norbornadiene, indene, benzofuran, benzothiophene, acenaphthene, or vinyl pyrene, fluorene, phenanthrene, chrysene, naphthacene, pentacene, or acenaphthene; excellent etching resistance; shorter wavelengths | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-29 | — | — | US | disclosed |
| US-20100151382-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-17 | — | — | US | disclosed |
| US-20060188809-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-08-24 | — | — | US | disclosed |
| US-20060019195-A1 | Photoresist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-01-26 | — | — | US | disclosed |
| US-20060014106-A1 | Photoresist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2006-01-19 | — | — | US | disclosed |
| US-20050282091-A1 | Patterning process and undercoat-forming material | SHIN-ETSU CHEMICAL CO.,LTD. (JP) | 2005-12-22 | — | — | US | disclosed |
| US-20050277756-A1 | Porous film-forming composition, patterning process, and porous sacrificial film | SHIN-ETSU CHEMICAL CO., LTD. | 2005-12-15 | — | — | US | disclosed |
| US-20050277058-A1 | Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the same | SHIN-ETSU CHEMICAL CO., LTD. | 2005-12-15 | — | — | US | disclosed |
| US-20040259037-A1 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-23 | — | — | US | disclosed |
| US-20040247900-A1 | Antireflective film material, and antireflective film and pattern formation method using the same | SHIN-ETSU CHEMICAL CO. LTD. (JP) | 2004-12-09 | — | — | US | disclosed |
| US-20040241577-A1 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-02 | — | — | US | disclosed |
| US-20040191479-A1 | Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-09-30 | — | — | US | disclosed |