⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Allylamine SCHEMBL6032547 | 0.95 | — | — | |
| Allylamine SCHEMBL15197 | 0.95 | — | — | |
| Allylamine SCHEMBL169953 | 0.90 | — | — | |
| Allylamine SCHEMBL3883129 | 0.90 | — | — | |
| Allylamine SCHEMBL15758677 | 0.90 | — | — | |
| Allylamine SCHEMBL1669962 | 0.90 | — | — | |
| Allylamine SCHEMBL3369484 | 0.90 | — | — | |
| Allylamine SCHEMBL11373125 | 0.90 | — | — | |
| Allylamine SCHEMBL8858077 | 0.90 | ALDH1A1 (0.90) | — | |
| Allylamine SCHEMBL5891273 | 0.90 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 57 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9418890-B2 | Method for tuning a deposition rate during an atomic layer deposition process | APPLIED MATERIALS, INC. (US) | 2016-08-16 | — | — | US | disclosed |
| US-9246096-B2 | Atomic layer deposition of metal oxides for memory applications | INTERMOLECULAR, INC. (US) | 2016-01-26 | — | — | US | disclosed |
| US-9130165-B2 | Atomic layer deposition of metal oxide materials for memory applications | INTERMOLECULAR, INC. (US) | 2015-09-08 | — | — | US | disclosed |
| US-20150179935-A1 | Atomic Layer Deposition of Metal Oxides for Memory Applications | SanDisk Technologies, Inc. | 2015-06-25 | — | — | US | disclosed |
| US-9006026-B2 | Atomic layer deposition of metal oxides for memory applications | INTERMOLECULAR, INC. (US) | 2015-04-14 | — | — | US | disclosed |
| US-20150056749-A1 | Atomic Layer Deposition of Metal Oxide Materials for Memory Applications | SanDisk Technologies, Inc. | 2015-02-26 | — | — | US | disclosed |
| US-20140363920-A1 | Atomic Layer Deposition of Metal Oxides for Memory Applications | SANDISK TECHNOLOGIES LLC | 2014-12-11 | — | — | US | disclosed |
| US-8883655-B2 | Atomic layer deposition of metal oxide materials for memory applications | Intermoecular, Inc. (US) | 2014-11-11 | — | — | US | disclosed |
| US-8846443-B2 | Atomic layer deposition of metal oxides for memory applications | INTERMOLECULAR, INC. (US) | 2014-09-30 | — | — | US | disclosed |
| US-20140248772-A1 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS | APPLIED MATERIALS, INC. (US) | 2014-09-04 | — | — | US | disclosed |
| US-20070042130-A1 | Method of treating films using UV-generated active species | APPLIED MATERIALS, INC. | 2007-02-22 | — | — | US | disclosed |
| EP-1745159-A2 | APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION | Applied Materials, Inc. (US) | 2007-01-24 | — | — | EP | disclosed |
| EP-1745160-A1 | APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION OF HAFNIUM-CONTAINING HIGH-K DIELECTRIC MATERIALS | Applied Materials, Inc. (US) | 2007-01-24 | — | — | EP | disclosed |
| US-20060153995-A1 | Method for fabricating a dielectric stack | APPLIED MATERIALS, INC. | 2006-07-13 | — | — | US | disclosed |
| US-20060062917-A1 | Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane | APPLIED MATERIALS, INC. | 2006-03-23 | — | — | US | disclosed |
| US-20060019033-A1 | Plasma treatment of hafnium-containing materials | APPLIED MATERIALS, INC. | 2006-01-26 | — | — | US | disclosed |
| US-20050271813-A1 | Apparatuses and methods for atomic layer deposition of hafnium-containing high-k dielectric materials | APPLIED MATERIALS, INC. | 2005-12-08 | — | — | US | disclosed |
| US-20050271812-A1 | Apparatuses and methods for atomic layer deposition of hafnium-containing high-k dielectric materials | APPLIED MATERIALS, INC. | 2005-12-08 | — | — | US | disclosed |
| WO-2005113855-A1 | APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION OF HAFNIUM-CONTAINING HIGH-K DIELECTRIC MATERIALS | APPLIED MATERIALS, INC. (US) | 2005-12-01 | — | — | WO | disclosed |
| WO-2005113852-A2 | APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. (US) | 2005-12-01 | — | — | WO | disclosed |