⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7167007 | 0.89 | — | — | |
| SCHEMBL136212 | 0.89 | — | — | |
| SCHEMBL134031 | 0.87 | — | — | |
| SCHEMBL700143 | 0.87 | — | — | |
| SCHEMBL17159987 | 0.87 | — | — | |
| SCHEMBL9954883 | 0.75 | — | — | |
| SCHEMBL141586 | 0.75 | — | — | |
| SCHEMBL5582040 | 0.75 | — | — | |
| SCHEMBL2745405 | 0.75 | — | — | |
| SCHEMBL6250778 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 607 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115260456-B | Quantum dot composition and light-emitting device | 财团法人工业技术研究院 | 2024-06-04 | — | — | CN | claimed |
| US-20220384728-A1 | POLYMER, QUANTUM DOT COMPOSITION AND LIGHT-EMITTING DEVICE EMPLOYING THE SAME | INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) | 2022-12-01 | — | — | US | claimed |
| US-20210080454-A1 | QUANTUM DOT BEAD HAVING MULTIFUNCTIONAL LIGAND, AND TARGET ANTIGEN DETECTION METHOD AND BIO-DIAGNOSTIC APPARATUS USING SAME | ZEUS CO., LTD. (KR) | 2021-03-18 | — | — | US | claimed |
| US-20210072239-A1 | BIOSENSOR COMPRISING LINKER MATERIAL AND QUANTUM DOT BEADS, AND TARGET ANTIGEN DETECTION METHOD USING SAME | ZEUS CO., LTD. (KR) | 2021-03-11 | — | — | US | claimed |
| US-10439356-B2 | III-V photonic integrated circuits on silicon substrate | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2019-10-08 | — | — | US | claimed |
| US-20190252571-A1 | METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS | INTEGRATED SOLAR (NO) | 2019-08-15 | — | — | US | claimed |
| EP-2745329-B1 | PHOTOVOLTAIC DEVICE | IQE PLC (GB) | 2018-09-19 | — | — | EP | claimed |
| US-10014377-B2 | III-V field effect transistor on a dielectric layer | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2018-07-03 | — | — | US | claimed |
| US-9882021-B2 | Planar III-V field effect transistor (FET) on dielectric layer | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2018-01-30 | — | — | US | claimed |
| US-20170352536-A1 | A METHOD OF EPITAXIAL GROWTH OF A MATERIAL INTERFACE BETWEEN GROUP III-V MATERIALS AND SILICON WAFERS PROVIDING COUNTERBALANCING OF RESIDUAL STRAINS | INTEGRATED SOLAR (NO) | 2017-12-07 | — | — | US | claimed |
| US-20140014169-A1 | NANOSTRING MATS, MULTI-JUNCTION DEVICES, AND METHODS FOR MAKING SAME | TRITON SYSTEMS INC (US) | 2014-01-16 | — | — | US | claimed |
| US-20130112275-A1 | SILICON HETEROJUNCTION PHOTOVOLTAIC DEVICE WITH WIDE BAND GAP EMITTER | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2013-05-09 | — | — | US | claimed |
| US-20130092218-A1 | BACK-SURFACE FIELD STRUCTURES FOR MULTI-JUNCTION III-V PHOTOVOLTAIC DEVICES | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2013-04-18 | — | — | US | claimed |
| WO-2013030530-A1 | PHOTOVOLTAIC DEVICE | IQE PLC. (GB) | 2013-03-07 | — | — | WO | claimed |
| US-20120255600-A1 | METHOD OF BONDING AND FORMATION OF BACK SURFACE FIELD (BSF) FOR MULTI-JUNCTION III-V SOLAR CELLS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-10-11 | — | — | US | claimed |
| US-8202788-B2 | Method for fabricating GaNAsSb semiconductor | NANYANG TECHNOLOGICAL UNIVERSITY (SG) | 2012-06-19 | — | — | US | claimed |
| US-20110039400-A1 | METHOD FOR FABRICATING GaNAsSb SEMICONDUCTOR | NANYANG TECHNOLOGICAL UNIVERSITY (SG) | 2011-02-17 | — | — | US | claimed |
| WO-2009157870-A1 | METHOD FOR FABRICATING GANASSB SEMICONDUCTOR | NANYANG TECHNOLOGICAL UNIVERSITY (SG) | 2009-12-30 | — | — | WO | claimed |
| US-7123638-B2 | Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. (SG) | 2006-10-17 | — | — | US | claimed |
| US-20050083979-A1 | Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant | AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED (SG) | 2005-04-21 | — | — | US | claimed |