SCHEMBL219556

SCHEMBL219556

CCN(OC)C(N)=O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL867268 0.84
SCHEMBL27633653 0.79
SCHEMBL9098521 0.77
SCHEMBL31396169 0.77
SCHEMBL11275702 0.77
SCHEMBL1940675 0.76
SCHEMBL207668 0.76
SCHEMBL28266581 0.75
SCHEMBL25330205 0.74
Hydrochloric Acid SCHEMBL11244162 0.74

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-1993333-B Triazole derivatives TAISHO PHARMACEUTICAL CO LTD 2012-08-01 CN claimed
CN-107703716-A Anticorrosive additive material and pattern formation method 信越化学工业株式会社 2018-02-16 CN disclosed
US-8288072-B2 Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-16 US disclosed
CN-1993333-B Triazole derivatives TAISHO PHARMACEUTICAL CO LTD 2012-08-01 CN disclosed
CN-101415687-B Binding inhibitor of sphingosine-1-phosphate TAISHO PHARMACEUTICAL CO.,LTD. (JP) 2012-02-08 CN disclosed
US-8088554-B2 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD (JP) 2012-01-03 US disclosed
CN-101415691-B Triazole derivatives TAISHO PHARMACEUTICAL CO.,LTD. (JP) 2011-12-14 CN disclosed
CN-101107333-B Ink for ink jet, ink set for ink jet, and ink jet recording method KONICA MINOLTA HOLDINGS INC 2010-07-07 CN disclosed
US-7745104-B2 Polymer having a hydrocarbon chain backbone and containing units derived from norbornadiene, indene, benzofuran, benzothiophene, acenaphthene, or vinyl pyrene, fluorene, phenanthrene, chrysene, naphthacene, pentacene, or acenaphthene; excellent etching resistance; shorter wavelengths SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-29 US disclosed
US-20100151382-A1 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-17 US disclosed
CN-101107333-A Ink for ink jet, ink set for ink jet, and ink jet recording method KONICA MINOLTA HOLDINGS INC (JP) 2008-01-16 CN disclosed
CN-1993333-A Triazole derivatives TAISHO PHARMACEUTICAL CO LTD (JP) 2007-07-04 CN disclosed
EP-1798599-A1 Antireflection film composition, patterning process and substrate using the same Shinetsu Chemical Co., Ltd. (JP) 2007-06-20 EP disclosed
US-20070134916-A1 Antireflection film composition, patterning process and substrate using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7214743-B2 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-08 US disclosed
US-7186831-B2 5-halo-2-alkyl[1,2,4]triazolo[1,5-a]pyrimidin-7-amines BAYER CROPSCIENCE LP (DE) 2007-03-06 US disclosed
US-20060234158-A1 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-10-19 US disclosed
US-20040259037-A1 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-23 US disclosed
US-20040241577-A1 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-02 US disclosed
US-20040142943-A1 Triazolopyrimidines BAYER CROPSCIENCE AG (DE) 2004-07-22 US disclosed