SCHEMBL867268

SCHEMBL867268

CON(CO)C(N)=O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL219556 0.84
SCHEMBL9098521 0.77
SCHEMBL11275702 0.77
Urea SCHEMBL8463108 0.75
SCHEMBL2841799 0.73
SCHEMBL9014288 0.72
SCHEMBL11571054 0.72
SCHEMBL3808514 0.72 ALOX15 (0.31)
SCHEMBL11597967 0.72
Methoxymethane SCHEMBL8591569 0.70 ALOX15 (0.32)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 63 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7235348-B2 Water soluble negative tone photoresist TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2007-06-26 US claimed
US-20060137104-A1 Method of producing fabric ZHANG YU-GAO 2006-06-29 US claimed
EP-1492918-A4 METHOD OF PRODUCING FABRIC GUANGDONG ESQUEL KNITTERS CO L (CN) 2006-06-21 EP claimed
EP-1492918-A2 METHOD OF PRODUCING FABRIC Guangdong Esquel Kniiters Co., Ltd. (CN) 2005-01-05 EP claimed
US-20040234897-A1 Water soluble negative tone photoresist TAIWAN SEMICONDUTOR MANUFACTURING CO. 2004-11-25 US claimed
EP-1480081-A2 Use of water soluble negative tone photoresist for producing closely spaced contact holes CLARIANT INTERNATIONAL LTD. (CH) 2004-11-24 EP claimed
US-20030135932-A1 Method of producing fabric GUANGDONG ESQUEL KNITTERS CO., LTD. (CN) 2003-07-24 US claimed
WO-2003060222-A2 METHOD OF PRODUCING FABRIC GUANGDONG ESQUEL KNITTERS CO., LTD. (CN) 2003-07-24 WO claimed
US-20030129538-A1 Method for eliminating corner round profile of the RELACS process MACRONIX INTERNATIONAL CO., LTD. 2003-07-10 US claimed
US-5858620-A Semiconductor device and method for manufacturing the same MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 1999-01-12 US claimed
JP-56104958-A None JP disclosed
EP-1398671-B1 Resist pattern thickening material, process for forming resist pattern, and process for manufacturing semiconductor device FUJITSU LTD (JP) 2016-06-01 EP disclosed
US-9304399-B2 Resist composition and method for producing semiconductor device SONY CORPORATION (JP) 2016-04-05 US disclosed
EP-2168008-B1 SPACER LITHOGRAPHY ADVANCED MICRO DEVICES INC (US) 2014-11-26 EP disclosed
US-20140273513-A1 RESIST COMPOSITION AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE SONY CORPORATION (JP) 2014-09-18 US disclosed
CN-1221971-A Semiconductor device and method for manufacturing the same MITSUBISHI ELECTRIC CORP (JP) 1999-07-07 CN disclosed
US-5858620-A Semiconductor device and method for manufacturing the same MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 1999-01-12 US disclosed
US-5306435-A Dimensional stability, shrinkage inhibition during washing NIHON JUNYAKU CO., LTD. (JP) 1994-04-26 US disclosed
JP-S56104958-A FIRE RETARDANT GLASS FIBER STRUCTURE AND ITS BINDER SANWA CHEM:KK 1981-08-21 JP disclosed
US-3963668-A GLASS FIBERS, ALKOXYMETHYL UREAS BASF AKTIENGESELLSCHAFT (DT) 1976-06-15 US disclosed