⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Dimethylamine SCHEMBL1330452 | 0.89 | — | — | |
| Dimethylamine SCHEMBL5164633 | 0.89 | — | — | |
| Dimethylamine SCHEMBL12415750 | 0.89 | — | — | |
| Dimethylamine SCHEMBL392668 | 0.89 | — | — | |
| Dimethylamine SCHEMBL1030 | 0.89 | — | — | |
| Dimethylamine SCHEMBL13695986 | 0.89 | — | — | |
| Dimethylamine SCHEMBL11567323 | 0.80 | — | — | |
| Dimethylamine SCHEMBL8065154 | 0.80 | KDM4E (0.38) | — | |
| Dimethylamine SCHEMBL1003093 | 0.80 | KDM4E (0.38) | — | |
| Dimethylamine SCHEMBL7601721 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-107342218-A | The electric charge capture layer formed by ald | ASM IP控股有限公司 | 2017-11-10 | — | — | CN | claimed |
| US-12051586-B2 | Method of manufacturing semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-07-30 | — | — | US | disclosed |
| US-11114297-B2 | Method for forming semiconductor film and film forming device | TOKYO ELECTRON LIMITED (JP) | 2021-09-07 | — | — | US | disclosed |
| US-20210175073-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-06-10 | — | — | US | disclosed |
| CN-111696851-A | Film forming method and heat treatment apparatus | 东京毅力科创株式会社 | 2020-09-22 | — | — | CN | disclosed |
| US-20200168455-A1 | Method for Forming Semiconductor Film and Film Forming Device | TOKYO ELECTRON LIMITED (JP) | 2020-05-28 | — | — | US | disclosed |
| CN-108604620-A | Multi-junction optoelectronic device with group IV semiconductor as bottom junction | 奥塔装置公司 | 2018-09-28 | — | — | CN | disclosed |
| CN-103305805-B | Wearing part with coating depletion region and the method for producing the wearing part | 波音公司 | 2018-06-26 | — | — | CN | disclosed |
| CN-107923893-A | Carbon analysis method | 东亚合成株式会社 | 2018-04-17 | — | — | CN | disclosed |
| CN-106068335-A | Germanium or the ald of germanium oxide | 皮考逊公司 | 2016-11-02 | — | — | CN | disclosed |
| CN-100513636-C | Organometallic compounds | ROMA AND HAAS ELECTRONIC MATER (US) | 2009-07-15 | — | — | CN | disclosed |