SCHEMBL220472

SCHEMBL220472

[As-3].[As-3].[Ga+3].[Ga+3].[Ga+3].[In+3].[In+3].[In+3].[P-3].[P-3].[SbH6-3].[SbH6-3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL870035 0.91
SCHEMBL5582040 0.89
SCHEMBL64296 0.89
SCHEMBL1254380 0.89
SCHEMBL17159946 0.89
SCHEMBL590979 0.89
SCHEMBL10531765 0.80
SCHEMBL2838965 0.80
SCHEMBL136212 0.80
SCHEMBL107610 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 618 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11710803-B2 Compliant silicon substrates for heteroepitaxial growth by hydrogen-induced exfoliation RAYTHEON COMPANY (US) 2023-07-25 US claimed
CN-110494388-B Magnetohydrodynamic power generator 辉光能源公司 2023-02-28 CN claimed
US-20220085234-A1 COMPLIANT SILICON SUBSTRATES FOR HETEROEPITAXIAL GROWTH BY HYDROGEN-INDUCED EXFOLIATION RAYTHEON COMPANY 2022-03-17 US claimed
CN-108701714-B Apparatus and method for creating an active channel with indium rich side and bottom surfaces 英特尔公司 2021-09-07 CN claimed
US-11075200-B2 Integrated device with vertical field-effect transistors and hybrid channels INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2021-07-27 US claimed
US-10679992-B1 Integrated device with vertical field-effect transistors and hybrid channels INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2020-06-09 US claimed
US-20200164222-A1 INTEGRATED OPTOGENETIC DEVICE WITH LIGHT-EMITTING DIODES AND GLASS-LIKE CARBON ELECTRODES INTERNATIONAL BUSINESS MACHINES CORPORATION 2020-05-28 US claimed
US-20200161303-A1 INTEGRATED DEVICE WITH VERTICAL FIELD-EFFECT TRANSISTORS AND HYBRID CHANNELS INTERNATIONAL BUSINESS MACHINES CORPORATION 2020-05-21 US claimed
US-20200161302-A1 INTEGRATED DEVICE WITH VERTICAL FIELD-EFFECT TRANSISTORS AND HYBRID CHANNELS INTERNATIONAL BUSINESS MACHINES CORPORATION 2020-05-21 US claimed
US-10439356-B2 III-V photonic integrated circuits on silicon substrate INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2019-10-08 US claimed
US-9018517-B2 Silicon heterojunction photovoltaic device with wide band gap emitter INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2015-04-28 US claimed
WO-2014035498-A1 LIGNIN MEMBRANES AND COATINGS EMPIRE TECHNOLOGY DEVELOPMENT LLC (US) 2014-03-06 WO claimed
WO-2014012111-A1 NANOSTRING MATS, MULTI-JUNCTION DEVICES, AND METHODS FOR MAKING SAME TRITON SYSTEMS, INC. (US) 2014-01-16 WO claimed
US-20140014169-A1 NANOSTRING MATS, MULTI-JUNCTION DEVICES, AND METHODS FOR MAKING SAME TRITON SYSTEMS INC (US) 2014-01-16 US claimed
US-8610172-B2 FETs with hybrid channel materials INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-12-17 US claimed
WO-2013089944-A2 FETS WITH HYBRID CHANNEL MATERIALS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-06-20 WO claimed
US-20130153964-A1 FETs with Hybrid Channel Materials INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-06-20 US claimed
US-20130112275-A1 SILICON HETEROJUNCTION PHOTOVOLTAIC DEVICE WITH WIDE BAND GAP EMITTER INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-05-09 US claimed
US-20130092218-A1 BACK-SURFACE FIELD STRUCTURES FOR MULTI-JUNCTION III-V PHOTOVOLTAIC DEVICES INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-04-18 US claimed
US-20120255600-A1 METHOD OF BONDING AND FORMATION OF BACK SURFACE FIELD (BSF) FOR MULTI-JUNCTION III-V SOLAR CELLS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-10-11 US claimed