SCHEMBL107610

SCHEMBL107610

[Al+3].[Al+3].[As-3].[As-3].[As-3].[Ga+3].[Ga+3].[In+3].[In+3].[P-3].[P-3].[P-3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL870035 0.91
SCHEMBL12003675 0.91
SCHEMBL64296 0.89
SCHEMBL134770 0.89
SCHEMBL29273 0.89
SCHEMBL135574 0.89
SCHEMBL8709356 0.89
SCHEMBL61699 0.89
SCHEMBL2838965 0.80
SCHEMBL766543 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 406 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115260456-B Quantum dot composition and light-emitting device 财团法人工业技术研究院 2024-06-04 CN claimed
US-11869922-B2 In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes META PLATFORMS TECHNOLOGIES, LLC (US) 2024-01-09 US claimed
EP-4261323-A1 METHOD AND SYSTEM FOR MIXED GROUP V PRECURSOR PROCESS IQE plc (GB) 2023-10-18 EP claimed
CN-116892058-A Method and system for mixing group V precursor processes IQE公开有限公司 2023-10-17 CN claimed
US-20230326743-A1 METHOD AND SYSTEM FOR MIXED GROUP V PRECURSOR PROCESS IQE PLC (GB) 2023-10-12 US claimed
US-20230223742-A1 ALINGAAS/INGAASP/INP EDGE EMITTING SEMICONDUCTOR LASER INCLUDING MULTIPLE MONOLITHIC LASER DIODES SEMINEX CORPORATION (US) 2023-07-13 US claimed
EP-4158741-A1 ALINGAAS/INGAASP/INP EDGE EMITTING SEMICONDUCTOR LASER INCLUDING MULTIPLE MONOLITHIC LASER DIODES Seminex Corporation (US) 2023-04-05 EP claimed
CN-115039239-A In-situ selective etching and selective regrowth of epitaxial layers for reducing surface recombination velocity in light emitting diodes 元平台技术有限公司 2022-09-09 CN claimed
US-20220181160-A1 METHODS AND APPARATUS FOR IN-SITU PROTECTION OF ETCHED SURFACES APPLIED MATERIALS, INC. 2022-06-09 US claimed
CN-114097099-A Micro light emitting diode, micro light emitting diode device, display and method thereof 奥斯兰姆奥普托半导体股份有限两合公司 2022-02-25 CN claimed
US-20180212400-A1 PROCESS OF FORMING EPITAXIAL SUBSTRATE AND SEMICONDUCTOR OPTICAL DEVICE SUMITOMO ELECTRIC INDUSTRIES, LTD. (JP) 2018-07-26 US claimed
US-20170324219-A1 SEMICONDUCTOR LASER INCORPORATING AN ELECTRON BARRIER WITH LOW ALUMINUM CONTENT MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC. (US) 2017-11-09 US claimed
US-9354379-B2 Light guide based optical system for laser line generator PALO ALTO RESEARCH CENTER INCORPORATED (US) 2016-05-31 US claimed
US-20160091647-A1 Light Guide Based Optical System For Laser Line Generator U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS COLLATERAL AGENT 2016-03-31 US claimed
EP-2686884-A1 FUNCTIONAL INTEGRATION OF DILUTE NITRIDES INTO HIGH EFFICIENCY III-V SOLAR CELLS Solar Junction Corporation (US) 2014-01-22 EP claimed
WO-2010151553-A1 FUNCTIONAL INTEGRATION OF DILUTE NITRIDES INTO HIGH EFFICIENCY III-V SOLAR CELLS SOLAR JUNCTION CORPORATION (US) 2010-12-29 WO claimed
US-20100319764-A1 Functional Integration Of Dilute Nitrides Into High Efficiency III-V Solar Cells SOLAR JUNCTION CORP. (US) 2010-12-23 US claimed
EP-2064588-A1 ELECTRO-OPTIC WAVEGUIDE POLARISATION MODULATOR Qinetiq Limited (GB) 2009-06-03 EP claimed
WO-2008032048-A1 ELECTRO-OPTIC WAVEGUIDE POLARISATION MODULATOR QINETIQ LIMITED (GB) 2008-03-20 WO claimed
WO-1998022998-A1 ELECTRON BEAM PUMPED SEMICONDUCTOR LASER SCREEN AND METHOD OF FORMING MCDONNELL DOUGLAS (US) 1998-05-28 WO claimed