SCHEMBL22097447

SCHEMBL22097447

CCC(Cc1c(I)cc(I)c(O)c1I)C(=O)NS(C)(=O)=O

nearest known ligand 0.67

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 1/20 0.67
CYP1A2 P05177 2/20 0.48
CYP2C9 P11712 2/20 0.48
LMNA P02545 2/20 0.48
CHRM1 P11229 1/20 0.48
TBXA2R P21731 1/20 0.48
PDE4A P27815 1/20 0.48
ADRA1A P35348 1/20 0.48
HIF1A Q16665 1/20 0.48
AKR1C3 P42330 1/20 0.35
AKR1C2 P52895 1/20 0.35
CXCR1 P25024 2/20 0.35
CXCR2 P25025 2/20 0.35
SIRT5 Q9NXA8 1/20 0.34
HTT P42858 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33
CA1 P00915 3/20 0.33
CA2 P00918 3/20 0.33
MEN1 O00255 2/20 0.33
KMT2A Q03164 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19379584 0.81 TDP1 (0.69) TDP1CYP1A2CYP2C9LMNACHRM1
Iophenoxic Acid SCHEMBL966564 0.80 TDP1 (1.00) TDP1CYP1A2CYP2C9LMNACHRM1
SCHEMBL25478285 0.80 TDP1 (0.72) TDP1CYP1A2CYP2C9LMNACHRM1
SCHEMBL19379575 0.78 TDP1 (0.61) TDP1CYP1A2CYP2C9LMNACHRM1
SCHEMBL19379583 0.77 TDP1 (0.60) TDP1CYP1A2CYP2C9LMNACHRM1
SCHEMBL19379586 0.76 TDP1 (0.62) TDP1CYP1A2CYP2C9LMNACHRM1
SCHEMBL19756110 0.75 TDP1 (0.61) TDP1CYP1A2CYP2C9LMNACHRM1
SCHEMBL19386148 0.75 TDP1 (0.60) TDP1CYP1A2CYP2C9LMNACHRM1
SCHEMBL22789923 0.74 TDP1 (0.39) TDP1CYP1A2CYP2C9LMNATBXA2R
SCHEMBL25475521 0.73 TDP1 (0.61) TDP1CYP1A2CYP2C9LMNACHRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20230359119-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-09 US disclosed
US-11774853-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-03 US disclosed
US-11774853-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-03 US disclosed
US-20230305394-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
US-20230305393-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
US-20230305393-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
US-20230305394-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-11269253-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-03-08 US disclosed
US-20200285149-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-09-10 US disclosed
US-20200192222-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-06-18 US disclosed