⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL36079 | 0.89 | — | — | |
| SCHEMBL27728304 | 0.89 | — | — | |
| SCHEMBL9134816 | 0.80 | — | — | |
| Fluoride SCHEMBL6307522 | 0.80 | — | — | |
| Helium SCHEMBL7645253 | 0.80 | — | — | |
| SCHEMBL18092242 | 0.80 | — | — | |
| SCHEMBL6319137 | 0.80 | — | — | |
| SCHEMBL6311816 | 0.80 | — | — | |
| Ammonia Solution, Strong SCHEMBL14575844 | 0.73 | — | — | |
| SCHEMBL27791038 | 0.73 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230024544-A1 | SEMICONDUCTOR STRUCTURE, METHOD OF FORMING SEMICONDUCTOR STRUCTURE, AND MEMORY | CHANGXIN MEMORY TECHNOLOGIES, INC. (CN) | 2023-01-26 | — | — | US | claimed |
| US-11374038-B2 | Array substrate having protection region on same layer as gate insulating layer and manufacturing method thereof | WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. (CN) | 2022-06-28 | — | — | US | claimed |
| US-20200251504-A1 | ARRAY SBUSTRATE AND MANUFACTURING METHOD THEREOF | WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. (CN) | 2020-08-06 | — | — | US | claimed |
| CN-118235526-A | Plasma processing apparatus | 日新电机株式会社 | 2024-06-21 | — | — | CN | disclosed |
| CN-116779544-B | Manufacturing method of semiconductor structure | 合肥晶合集成电路股份有限公司 | 2023-11-28 | — | — | CN | disclosed |
| CN-116779544-A | Manufacturing method of semiconductor structure | 合肥晶合集成电路股份有限公司 | 2023-09-19 | — | — | CN | disclosed |
| CN-116261773-A | Plasma processing apparatus | 日新电机株式会社 | 2023-06-13 | — | — | CN | disclosed |
| US-20230024544-A1 | SEMICONDUCTOR STRUCTURE, METHOD OF FORMING SEMICONDUCTOR STRUCTURE, AND MEMORY | CHANGXIN MEMORY TECHNOLOGIES, INC. (CN) | 2023-01-26 | — | — | US | disclosed |
| US-11374038-B2 | Array substrate having protection region on same layer as gate insulating layer and manufacturing method thereof | WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. (CN) | 2022-06-28 | — | — | US | disclosed |
| US-20200251504-A1 | ARRAY SBUSTRATE AND MANUFACTURING METHOD THEREOF | WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. (CN) | 2020-08-06 | — | — | US | disclosed |