⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6722147 | 0.83 | LMNA (0.32) | — | |
| SCHEMBL7642505 | 0.82 | — | — | |
| SCHEMBL19316 | 0.78 | — | — | |
| SCHEMBL9259566 | 0.75 | — | — | |
| SCHEMBL18968 | 0.75 | — | — | |
| SCHEMBL305863 | 0.73 | — | — | |
| SCHEMBL7010829 | 0.73 | — | — | |
| SCHEMBL9363407 | 0.73 | — | — | |
| SCHEMBL20505330 | 0.73 | — | — | |
| SCHEMBL127683 | 0.73 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2360525-B1 | Chemically amplified positive resist composition and pattern forming process | SHINETSU CHEMICAL CO (JP) | 2017-08-23 | — | — | EP | disclosed |
| EP-2360527-B1 | Patterning process using EB or EUV lithography | SHINETSU CHEMICAL CO (JP) | 2017-08-23 | — | — | EP | disclosed |
| EP-2360526-B1 | Chemically amplified negative resist composition for E beam or EUV lithography and patterning process | SHINETSU CHEMICAL CO (JP) | 2017-08-16 | — | — | EP | disclosed |
| US-8546060-B2 | Chemically amplified positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-10-01 | — | — | US | disclosed |
| US-8470511-B2 | Chemically amplified negative resist composition for EB or EUV lithography and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-06-25 | — | — | US | disclosed |
| US-8426108-B2 | Chemically amplified positive resist composition for EB or EUV lithography and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-23 | — | — | US | disclosed |
| EP-2360525-A1 | Chemically amplified positive resist composition and pattern forming process | Shin-Etsu Chemical Co., Ltd. (JP) | 2011-08-24 | — | — | EP | disclosed |
| EP-2360526-A1 | Chemically amplified negative resist composition for E beam or EUV lithography and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2011-08-24 | — | — | EP | disclosed |
| EP-2360527-A1 | Chemically amplified positive resist composition for EB or EUV lithography and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2011-08-24 | — | — | EP | disclosed |
| US-20110200942-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION FOR EB OR EUV LITHOGRAPHY AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-08-18 | — | — | US | disclosed |
| US-20110200941-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR EB OR EUV LITHOGRAPHY AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-08-18 | — | — | US | disclosed |
| US-20110200919-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-08-18 | — | — | US | disclosed |