⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3482079 | 0.73 | — | — | |
| SCHEMBL436728 | 0.69 | — | — | |
| SCHEMBL27961691 | 0.69 | TSHR (0.38) | — | |
| SCHEMBL3481925 | 0.69 | — | — | |
| SCHEMBL1315546 | 0.67 | TSHR (0.30) | — | |
| SCHEMBL27493569 | 0.67 | — | — | |
| SCHEMBL2272411 | 0.67 | — | — | |
| Ammonia Solution, Strong SCHEMBL21802589 | 0.67 | TSHR (0.35) | — | |
| SCHEMBL14606212 | 0.67 | — | — | |
| SCHEMBL3266717 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 406 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-117210798-A | Method for depositing metal-free ALD silicon nitride films using halide-based precursors | 朗姆研究公司 | 2023-12-12 | — | — | CN | claimed |
| US-10526435-B2 | Method for manufacturing hydrogenated polymer | KURARAY CO., LTD. (JP) | 2020-01-07 | — | — | US | claimed |
| EP-3162816-B1 | METHOD FOR MANUFACTURING HYDROGENATED POLYMER | KURARAY CO (JP) | 2019-01-02 | — | — | EP | claimed |
| US-20170204214-A1 | METHOD FOR MANUFACTURING HYDROGENATED POLYMER | KURARAY CO., LTD. (JP) | 2017-07-20 | — | — | US | claimed |
| US-20170178899-A1 | DIRECTIONAL DEPOSITION ON PATTERNED STRUCTURES | LAM RESEARCH CORPORATION | 2017-06-22 | — | — | US | claimed |
| EP-3162816-A1 | METHOD FOR MANUFACTURING HYDROGENATED POLYMER | Kuraray Co., Ltd. (JP) | 2017-05-03 | — | — | EP | claimed |
| US-20260090294-A1 | DOPED SILICON OR BORON LAYER FORMATION | LAM RES CORP (US) | 2026-03-26 | — | — | US | disclosed |
| US-20260090293-A1 | SEMICONDUCTOR STACKS AND PROCESSES THEREOF | LAM RES CORP (US) | 2026-03-26 | — | — | US | disclosed |
| US-12588475-B2 | High selectivity doped hardmask films | LAM RESEARCH CORPORATION (US) | 2026-03-24 | — | — | US | disclosed |
| US-20260076110-A1 | HYBRID ATOMIC LAYER DEPOSITION | LAM RES CORP (US) | 2026-03-12 | — | — | US | disclosed |
| US-20260047361-A1 | METHOD AND APPARATUS FOR ATOMIC LAYER DEPOSITION USING MULTIPLE CHAMBERS | NATIONAL TSING HUA UNIVERSITY (TW) | 2026-02-12 | — | — | US | disclosed |
| US-20250385088-A1 | BACKSIDE LAYER FOR A SEMICONDUCTOR SUBSTRATE | LAM RES CORP (US) | 2025-12-18 | — | — | US | disclosed |
| US-20250372367-A1 | DEPOSITION AND ETCH OF SILICON-CONTAINING LAYER | LAM RES CORP (US) | 2025-12-04 | — | — | US | disclosed |
| US-8404584-B2 | Method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2013-03-26 | — | — | US | disclosed |
| WO-2011130397-A2 | IMPROVED SILICON NITRIDE FILMS AND METHODS | NOVELLUS SYSTEMS, INC. (US) | 2011-10-20 | — | — | WO | disclosed |
| US-20110256734-A1 | SILICON NITRIDE FILMS AND METHODS | NOVELLUS SYSTEMS, INC. | 2011-10-20 | — | — | US | disclosed |
| US-20110207319-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-08-25 | — | — | US | disclosed |
| EP-0484857-B1 | Polyorganosiloxane having a quaternary salt at its one terminal and percutaneous absorption-promoting agent | SAGAMI CHEM RES (JP) | 1997-05-07 | — | — | EP | disclosed |
| US-5200488-A | POLYORGANOSILOXANE HAVING A QUATERNARY SALT AT ITS ONE TERMINAL AND PERCUTANEOUS ABSORPTION-PROMOTING AGENT | SAGAMI CHEMICAL RESEARCH CENTER (JP) | 1993-04-06 | — | — | US | disclosed |
| EP-0484857-A2 | Polyorganosiloxane having a quaternary salt at its one terminal and percutaneous absorption-promoting agent | SAGAMI CHEMICAL RESEARCH CENTER (JP) | 1992-05-13 | — | — | EP | disclosed |