SCHEMBL2269425

SCHEMBL2269425

CNC[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28233101 0.87
SCHEMBL2268539 0.67
SCHEMBL592710 0.63
Dimethylamine SCHEMBL23327897 0.60
SCHEMBL5425 0.59
Methylethylamine SCHEMBL14666 0.59
SCHEMBL14716928 0.59 CARM1 (0.47)
Methylethylamine SCHEMBL20584249 0.56 TP53 (0.42)
Methylethylamine SCHEMBL20507023 0.56
Methylethylamine SCHEMBL21352603 0.56

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116761906-A Selective plasma enhanced atomic layer deposition 弗萨姆材料美国有限责任公司 2023-09-15 CN disclosed
CN-105632885-B The forming method of semiconductor structure 中芯国际集成电路制造(上海)有限公司 2019-01-22 CN disclosed
WO-2016081790-A1 MOISTURE CURABLE COMPOSITIONS MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2016-05-26 WO disclosed
US-9315670-B2 Composition for forming resist underlayer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-19 US disclosed
WO-2015031712-A1 MOISTURE CURABLE COMPOUND WITH AMINO ACIDS MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2015-03-05 WO disclosed
US-20140235796-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-21 US disclosed
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-7842831-B2 Method for the continuous production of silicon compounds bearing amino groups WACKER CHEMIE AG (DE) 2010-11-30 US disclosed
CN-100569783-C The continuous production method that has amino silicon compound WACKER CHEMIE AG (DE) 2009-12-16 CN disclosed
US-20090253925-A1 METHOD FOR THE CONTINUOUS PRODUCTION OF SILICON COMPOUNDS BEARING AMINO GROUPS WACKER CHEMIE AG (DE) 2009-10-08 US disclosed
CN-100516075-C Method for producing silicon compound having amino group WACKER CHEMIE GMBH (DE) 2009-07-22 CN disclosed
US-7417160-B2 Method for the production of silicon compounds carrying amino groups WACKER CHEMIE AG (DE) 2008-08-26 US disclosed
EP-1831233-B1 METHOD FOR THE CONTINUOUS PRODUCTION OF SILICON COMPOUNDS CARRYING AMINO GROUPS WACKER CHEMIE AG (DE) 2008-04-23 EP disclosed
CN-101080414-A Method for the continuous production of silicon compounds carrying amino groups WACKER CHEMIE AG (DE) 2007-11-28 CN disclosed
EP-1682558-B1 METHOD FOR THE PRODUCTION OF SILICON COMPOUNDS CARRYING AMINO GROUPS WACKER CHEMIE AG (DE) 2007-09-19 EP disclosed
CN-1878780-A Method for producing silicon compound having amino group WACKER CHEMIE GMBH (DE) 2006-12-13 CN disclosed
US-20060194976-A1 METHOD FOR THE PRODUCTION OF SILICON COMPOUNDS CARRYING AMINO GROUPS WACKER CHEMIE AG (DE) 2006-08-31 US disclosed