⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL863701 | 0.85 | — | — | |
| SCHEMBL1826123 | 0.80 | — | — | |
| SCHEMBL864005 | 0.76 | — | — | |
| SCHEMBL27259238 | 0.76 | — | — | |
| SCHEMBL29043626 | 0.76 | TSHR (0.44) | — | |
| SCHEMBL2102694 | 0.74 | — | — | |
| SCHEMBL2271817 | 0.73 | — | — | |
| SCHEMBL9776680 | 0.71 | — | — | |
| SCHEMBL523323 | 0.69 | — | — | |
| SCHEMBL2103035 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4703065-A1 | NON-SPHERICAL PARTICLE AND DIELECTRIC COMPOSITE MATERIAL COMPRISING SAME | Huawei Technologies Co., Ltd. (CN) | 2026-03-04 | — | — | EP | disclosed |
| WO-2024229848-A1 | NON-SPHERICAL PARTICLE AND DIELECTRIC COMPOSITE MATERIAL COMPRISING SAME | 华为技术有限公司 | 2024-11-14 | — | — | WO | disclosed |
| US-11807758-B2 | Siloxane polymer and method of producing siloxane polymer | JNC CORPORATION (JP) | 2023-11-07 | — | — | US | disclosed |
| US-20210238419-A1 | SILOXANE POLYMER AND METHOD OF PRODUCING SILOXANE POLYMER | JNC CORPORATION (JP) | 2021-08-05 | — | — | US | disclosed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| CN-101641767-B | Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device | FUJITSU LTD | 2013-10-30 | — | — | CN | disclosed |
| US-8404584-B2 | Method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2013-03-26 | — | — | US | disclosed |
| US-20110207319-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-08-25 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| EP-1098926-B1 | CROSS-LINKABLE HYPERBRANCHED POLYMERS, METHOD FOR THE PRODUCTION AND USE OF THE SAME | BAYER MATERIALSCIENCE AG (DE) | 2004-03-03 | — | — | EP | disclosed |