Di(Hydroxyethyl)Ether

Di(Hydroxyethyl)Ether

SCHEMBL2271102

CNC.OCCOCCO

nearest known ligand 0.71

Full drug profile on Sugi Atlas →

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.71
MAPK1 P28482 2/20 0.71
MEN1 O00255 4/20 0.67
KMT2A Q03164 4/20 0.67
ALDH1A1 P00352 3/20 0.56
THRB P10828 1/20 0.48
HTT P42858 1/20 0.48
MAPT P10636 1/20 0.48
APP P05067 4/20 0.38
USP2 O75604 1/20 0.31
LMNA P02545 1/20 0.31
CYP3A4 P08684 1/20 0.31
CASP1 P29466 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
SLCO1B3 Q9NPD5 1/20 0.31
SLCO1B1 Q9Y6L6 1/20 0.31
ACHE P22303 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Di(Hydroxyethyl)Ether SCHEMBL27549537 0.85
Di(Hydroxyethyl)Ether SCHEMBL6856328 0.85
Di(Hydroxyethyl)Ether SCHEMBL1462 0.84
Di(Hydroxyethyl)Ether SCHEMBL2410410 0.84 TSHR (1.00) TSHRMAPK1MEN1KMT2AALDH1A1
2-Ethoxyethanol SCHEMBL110078 0.84
SCHEMBL40114 0.82
Di(Hydroxyethyl)Ether SCHEMBL6171 0.81 TSHR (0.77) TSHRMAPK1MEN1KMT2AALDH1A1
Di(Hydroxyethyl)Ether SCHEMBL28459383 0.81
Di(Hydroxyethyl)Ether SCHEMBL9058372 0.81 TSHR (0.77) TSHRMAPK1MEN1KMT2AALDH1A1
Di(Hydroxyethyl)Ether SCHEMBL11143375 0.81 TSHR (0.77) TSHRMAPK1MEN1KMT2AALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20210317391-A1 KIT FOR CLEANING AGENT AND METHOD FOR PREPARING CLEANING AGENT FUJIFILM ELECTRONIC MATERIALS CO., LTD. (JP) 2021-10-14 US claimed
US-7273060-B2 Methods for chemically treating a substrate using foam technology EKC TECHNOLOGY, INC. (US) 2007-09-25 US claimed
US-20070135321-A1 Methods for chemically treating a substrate using foam technology EKC TECHNOLOGY, INC. 2007-06-14 US claimed
US-20030171239-A1 Methods and compositions for chemically treating a substrate using foam technology EKC TECHNOLOGY, INC. 2003-09-11 US claimed
WO-2003064581-A1 METHODS AND COMPOSITIONS FOR CHEMICALLY TREATING A SUBSTRATE USING FOAM TECHNOLOGY EKC TECHNOLOGY, INC. (US) 2003-08-07 WO claimed
US-20260028553-A1 PROCESSING SOLUTION, METHOD FOR MANUFACTURING PROCESSING SOLUTION, METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TOKYO OHKA KOGYO CO LTD (JP) 2026-01-29 US disclosed
US-12374540-B2 Post-CMP semiconductor cleaning composition comprising an amine/alkanolamine mixture FUJIFILM CORPORATION (JP) 2025-07-29 US disclosed
US-12312569-B2 Kit for cleaning agent and method for preparing cleaning agent FUJIFILM CORPORATION (JP) 2025-05-27 US disclosed
US-12187943-B2 Chemical solution used for cleaning or etching ruthenium-containing layer and method for fabricating ruthenium wiring TOKYO OHKA KOGYO CO., LTD. (JP) 2025-01-07 US disclosed
US-11898081-B2 Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring TOKYO OHKA KOGYO CO., LTD. (JP) 2024-02-13 US disclosed
US-20220254624-A1 CLEANING METHOD FUJIFILM ELECTRONIC MATERIALS CO., LTD. (JP) 2022-08-11 US disclosed
US-20220243127-A1 CHEMICAL SOLUTION USED FOR CLEANING OR ETCHING RUTHENIUM-CONTAINING LAYER AND METHOD FOR FABRICATING RUTHENIUM WIRING TOKYO OHKA KOGYO CO., LTD. (JP) 2022-08-04 US disclosed
US-20210317391-A1 KIT FOR CLEANING AGENT AND METHOD FOR PREPARING CLEANING AGENT FUJIFILM ELECTRONIC MATERIALS CO., LTD. (JP) 2021-10-14 US disclosed
US-20210155851-A1 RUTHENIUM-ETCHING SOLUTION, METHOD FOR MANUFACTURING RUTHENIUM-ETCHING SOLUTION, METHOD FOR PROCESSING OBJECT TO BE PROCESSED, AND METHOD FOR MANUFACTURING RUTHENIUM-CONTAINING WIRING TOKYO OHKA KOGYO CO., LTD. (JP) 2021-05-27 US disclosed
US-8003587-B2 Semiconductor process residue removal composition and process EKC TECHNOLOGY, INC. (US) 2011-08-23 US disclosed
US-20090203566-A1 Semi Conductor Process Residue Removal Composition and Process EKC TECHNOLOGY, INC. 2009-08-13 US disclosed
EP-1362262-A1 SEMICONDUCTOR DEVELOPING AGENT HUNTSMAN PETROCHEMICAL CORPORATION (US) 2003-11-19 EP disclosed
WO-2002069052-A1 SEMICONDUCTOR DEVELOPING AGENT HUNTSMAN PETROCHEMICAL CORPORATION (US) 2002-09-06 WO disclosed
US-6340559-B1 IN THE MANUFACTURE OF INTEGRATED CIRCUITS HUNTSMAN PETROCHEMICAL CORPORATION 2002-01-22 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260028553-A1 PROCESSING SOLUTION, METHOD FOR MANUFACTURING PROCESSING SOLUTION, METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TET2, TET1, KDM2A TSHR 3546/4885MAPK1 1109/4885MEN1 3376/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.