⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27795578 | 0.74 | — | — | |
| SCHEMBL5088927 | 0.74 | TSHR (0.35) | — | |
| SCHEMBL2272586 | 0.73 | — | — | |
| SCHEMBL2100140 | 0.73 | — | — | |
| SCHEMBL12506401 | 0.70 | — | — | |
| SCHEMBL329235 | 0.70 | — | — | |
| SCHEMBL27840179 | 0.69 | — | — | |
| SCHEMBL2103121 | 0.69 | — | — | |
| SCHEMBL2267185 | 0.69 | — | — | |
| SCHEMBL2104098 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-101899651-B | Aminovinylsilane precursors for stressed SiN films | AIR PROD & CHEM | 2012-12-26 | — | — | CN | claimed |
| CN-101886255-B | Dielectric barrier deposition using nitrogen containing precursor | AIR PROD & CHEM | 2012-06-27 | — | — | CN | claimed |
| CN-101886255-A | Use contains the dielectric barrier deposition of nitrogen precursor | AIR PROD & CHEM | 2010-11-17 | — | — | CN | claimed |
| EP-3059256-B1 | A functionalized polymer blend for a tire | TRINSEO EUROPE GMBH (CH) | 2017-11-15 | — | — | EP | disclosed |
| CN-102491990-B | Based on the precursor of amino vinylsilane | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2015-12-09 | — | — | CN | disclosed |
| US-8404584-B2 | Method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2013-03-26 | — | — | US | disclosed |
| CN-101899651-B | Aminovinylsilane precursors for stressed SiN films | AIR PROD & CHEM | 2012-12-26 | — | — | CN | disclosed |
| CN-101886255-B | Dielectric barrier deposition using nitrogen containing precursor | AIR PROD & CHEM | 2012-06-27 | — | — | CN | disclosed |
| CN-102491990-A | Amino vinylsilane precursors for the deposition of intrinsically compressively stressed sin films | AIR PROD & CHEM | 2012-06-13 | — | — | CN | disclosed |
| CN-102206304-A | Conjugated diene polymer, conjugated diene polymer composition, and method for producing conjugated diene polymer | SUMITOMO CHEMICAL CO | 2011-10-05 | — | — | CN | disclosed |
| US-20110207319-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-08-25 | — | — | US | disclosed |
| CN-101899651-A | Aminovinylsilane precursors for stressed SiN films | AIR PROD & CHEM | 2010-12-01 | — | — | CN | disclosed |
| CN-101886255-A | Use contains the dielectric barrier deposition of nitrogen precursor | AIR PROD & CHEM | 2010-11-17 | — | — | CN | disclosed |