SCHEMBL329235

SCHEMBL329235

CCN(CC)[SiH](C)N(CC)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17717598 0.85
SCHEMBL2104278 0.82
SCHEMBL16284825 0.79
SCHEMBL16284824 0.79
SCHEMBL16284823 0.77
SCHEMBL433963 0.75
SCHEMBL17717636 0.75
SCHEMBL16284822 0.75
SCHEMBL17717595 0.73
SCHEMBL17717617 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 140 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12518966-B2 Selective plasma enhanced atomic layer deposition VERSUM MATERIALS US, LLC (US) 2026-01-06 US claimed
US-20250305131-A1 LOW TEMPERATURE THERMAL DEPOSITION OF SILICON-CONTAINING FILMS USING LOW WATER CONTENT HYDROGEN PEROXIDE GELEST, INC. 2025-10-02 US claimed
US-20250270698-A1 BORON-CONTAINING PRECURSORS FOR THE ALD DEPOSITION OF BORON NITRIDE FILMS VERSUM MATERIALS US, LLC 2025-08-28 US claimed
EP-4493734-A1 BORON-CONTAINING PRECURSORS FOR THE ALD DEPOSITION OF BORON NITRIDE FILMS Versum Materials US, LLC (US) 2025-01-22 EP claimed
CN-119213168-A Boron-containing precursors for ALD deposition of boron nitride films 弗萨姆材料美国有限责任公司 2024-12-27 CN claimed
US-20240047196-A1 SELECTIVE THERMAL ATOMIC LAYER DEPOSITION VERSUM MAT US LLC (US) 2024-02-08 US claimed
US-20240014036-A1 SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION VERSUM MATERIALS US, LLC 2024-01-11 US claimed
CN-116918029-A selective thermal atomic layer deposition 弗萨姆材料美国有限责任公司 2023-10-20 CN claimed
WO-2023201271-A1 BORON-CONTAINING PRECURSORS FOR THE ALD DEPOSITION OF BORON NITRIDE FILMS VERSUM MATERIALS US, LLC (US) 2023-10-19 WO claimed
CN-116761906-A Selective plasma enhanced atomic layer deposition 弗萨姆材料美国有限责任公司 2023-09-15 CN claimed
EP-0671483-B1 Method for vapor deposition of a ceramic coating using a steam-containing carrier gas and non-alkoxy silane precursors ENICHEM SPA (IT) 1997-12-29 EP claimed
EP-0540084-B1 Method for passivating the inner surface of a reactor subject to coking, by deposition of a ceramic coating, and method of pyrolyzing hydrocarbons ENICHEM SPA (IT) 1996-09-04 EP claimed
EP-0671483-A1 Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors ENICHEM S.p.A. (IT) 1995-09-13 EP claimed
EP-0384183-B1 Mixtures comprising silanol-terminated polydiorganosiloxane and processes GEN ELECTRIC (US) 1995-08-02 EP claimed
US-5424095-A Decomposing organosilicon precursor inside chemical reactor to form film of ceramic material on surface; prevents coking ENIRICERCHE S.P.A. (IT) 1995-06-13 US claimed
EP-0540084-A1 Method for passivating the inner surface of a reactor subject to coking, by deposition of a ceramic coating, and method of pyrolyzing hydrocarbons ENICHEM S.p.A. (IT) 1993-05-05 EP claimed
US-5208069-A Silane precursor ISTITUTO GUIDO DONEGANI S.P.A. (IT) 1993-05-04 US claimed
EP-0384183-A2 Mixtures comprising silanol-terminated polydiorganosiloxane and processes GENERAL ELECTRIC COMPANY (US) 1990-08-29 EP claimed
EP-0137883-A1 End-capping catalyst for forming alcoxy-functional one component RTV compositions GENERAL ELECTRIC COMPANY (US) 1985-04-24 EP claimed
US-4417042-A Scavengers for one-component alkoxy-functional RTV compositions and processes GENERAL ELECTRIC COMPANY (US) 1983-11-22 US claimed