⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15865 | 1.00 | — | — | |
| SCHEMBL9874288 | 1.00 | — | — | |
| SCHEMBL29978162 | 1.00 | — | — | |
| SCHEMBL8971269 | 1.00 | — | — | |
| SCHEMBL6282685 | 1.00 | — | — | |
| SCHEMBL8971734 | 1.00 | — | — | |
| SCHEMBL6448948 | 1.00 | — | — | |
| SCHEMBL3934609 | 1.00 | — | — | |
| SCHEMBL161826 | 1.00 | — | — | |
| SCHEMBL1509033 | 1.00 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 6039 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260150649-A1 | GATE ALL AROUND BACKSIDE POWER RAIL FORMATION WITH MULTI-COLOR BACKSIDE DIELECTRIC ISOLATION SCHEME | APPLIED MATERIALS, INC. (US) | 2026-05-28 | — | — | US | claimed |
| US-20260143787-A1 | CFET STRUCTURE WITH MULTIPLE THRESHOLD VOLTAGES AND METHOD MAKING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD (TW) | 2026-05-21 | — | — | US | claimed |
| US-20260136642-A1 | Threshold Voltage Tuning Using a Multiple Dipole Loop Process for Monolithic CFET Devices | TAIWAN SEMICONDUCTOR MFG (TW) | 2026-05-14 | — | — | US | claimed |
| US-20260122993-A1 | SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-30 | — | — | US | claimed |
| US-12588194-B2 | Method for physically unclonable function through gate height tuning | UNITED MICROELECTRONICS CORP. (TW) | 2026-03-24 | — | — | US | claimed |
| US-12588248-B2 | Template for nanosheet source drain formation with bottom dielectric | APPLIED MATERIALS, INC. (US) | 2026-03-24 | — | — | US | claimed |
| US-12557565-B2 | Phase change memory with reduced programming current | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2026-02-17 | — | — | US | claimed |
| US-12557343-B2 | Method of ultra thinning of wafer | APPLIED MATERIALS, INC. (US) | 2026-02-17 | — | — | US | claimed |
| US-12557636-B2 | Gate all around backside power rail formation with backside dielectric isolation scheme | APPLIED MATERIALS, INC. (US) | 2026-02-17 | — | — | US | claimed |
| US-20260040647-A1 | SEMICONDUCTOR DEVICE WITH A FIELD PLATE HAVING A RECESSED REGION AND AN OVERHANGING PORTION AND METHOD OF FABRICATION THEREFOR | NXP USA INC (US) | 2026-02-05 | — | — | US | claimed |
| CN-114287071-A | Negative pole piece, lithium metal battery containing negative pole piece and electronic device | 宁德新能源科技有限公司 | 2022-04-05 | — | — | CN | claimed |
| CN-114249349-A | Preparation method and application of titanium tricarbodiimide-bismuth sulfide nanocomposite | 哈尔滨医科大学 | 2022-03-29 | — | — | CN | claimed |
| US-11264289-B2 | Method for threshold voltage tuning through selective deposition of high-K metal gate (HKMG) film stacks | TOKYO ELECTRON LIMITED (JP) | 2022-03-01 | — | — | US | claimed |
| US-11245020-B2 | Gate-all-around field effect transistor having multiple threshold voltages | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2022-02-08 | — | — | US | claimed |
| US-20220037499-A1 | TRANSISTORS WITH DIFFERENT THRESHOLD VOLTAGES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-02-03 | — | — | US | claimed |
| US-9831194-B1 | Edge compression layers | GLOBALFOUNDRIES INC. (KY) | 2017-11-28 | — | — | US | claimed |
| US-20150380512-A1 | METAL GATE STRUCTURE AND MANUFACTURING METHOD THEREOF | UNITED MICROELECTRONICS CORP. (TW) | 2015-12-31 | — | — | US | claimed |
| US-9166020-B2 | Metal gate structure and manufacturing method thereof | UNITED MICROELECTRONICS CORP. (TW) | 2015-10-20 | — | — | US | claimed |
| US-20120261770-A1 | METAL GATE STRUCTURE | UNITED MICROELECTRONICS CORP. (TW) | 2012-10-18 | — | — | US | claimed |
| US-20120223397-A1 | METAL GATE STRUCTURE AND MANUFACTURING METHOD THEREOF | UNITED MICROELECTRONICS CORP. (TW) | 2012-09-06 | — | — | US | claimed |