SCHEMBL22941016

SCHEMBL22941016

CC(C)(C)C(=O)Oc1cc(C(=O)OC(CS(=O)(=O)O)C(F)(F)F)ccc1I

nearest known ligand 0.33

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
ELANE P08246 18/20 0.33
ALDH1A1 P00352 1/20 0.32
LMNA P02545 1/20 0.32
CYP3A4 P08684 1/20 0.32
HIF1A Q16665 1/20 0.32
ADRB2 P07550 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25952440 0.91 TSHR (0.30)
SCHEMBL25476726 0.91 TSHR (0.30)
SCHEMBL19755984 0.89 TSHR (0.35) ALDH1A1
SCHEMBL25140216 0.87 ALOX15 (0.33) ELANEADRB2
SCHEMBL19755987 0.87 TSHR (0.35) ALDH1A1CYP3A4
SCHEMBL22866009 0.86 ELANE (0.30) ELANE
SCHEMBL23426226 0.84
SCHEMBL19755962 0.82 NPSR1 (0.34)
SCHEMBL19756200 0.82
SCHEMBL22168542 0.81 TTR (0.31)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230251573-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-10 US disclosed
US-20230251572-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-10 US disclosed
US-20230161255-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-20230161252-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-25 US disclosed
US-11586110-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-02-21 US disclosed
US-20210033971-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-02-04 US disclosed