Nitrous Oxide

Nitrous Oxide

SCHEMBL2299393

N#[N+][O-].[Si]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-5972763-A Method of fabricating an air-gap spacer of a metal-oxide-semiconductor device UNITED MICROELECTRONICS CORP. (TW) 1999-10-26 US claimed
US-11641755-B2 Top-emission type organic electroluminescent element and top-emission type organic electroluminescent device Xianyang Caihong Optoelectronics Technology Co., Ltd (CN) 2023-05-02 US disclosed
US-20220020954-A1 TOP-EMISSION TYPE ORGANIC ELECTROLUMINESCENT ELEMENT AND TOP-EMISSION TYPE ORGANIC ELECTROLUMINESCENT DEVICE XIANYANG CAIHONG OPTOELECTRONICS TECHNOLOGY CO.,LTD (CN) 2022-01-20 US disclosed
US-10340322-B2 Display device and organic light emitting diode (OLED) display panel SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. (CN) 2019-07-02 US disclosed
US-20190115408-A1 DISPLAY DEVICE AND ORGANIC LIGHT EMITTING DIODE (OLED) DISPLAY PANEL SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. (CN) 2019-04-18 US disclosed
US-9720292-B2 Liquid crystal display panel and method for making same CENTURY TECHNOLOGY (SHENZHEN) CORPORATION LIMITED (CN) 2017-08-01 US disclosed
US-20160291421-A1 LIQUID CRYSTAL DISPLAY PANEL AND METHOD FOR MAKING SAME CENTURY TECHNOLOGY (SHENZHEN) CORPORATION LIMITED (CN) 2016-10-06 US disclosed
US-8748222-B2 Method for forming oxide thin film transistor E INK HOLDINGS INC. (TW) 2014-06-10 US disclosed
US-20110189818-A1 Method for forming oxide thin film transistor PRIME VIEW INTERNATIONAL CO., LTD. 2011-08-04 US disclosed
US-5972763-A Method of fabricating an air-gap spacer of a metal-oxide-semiconductor device UNITED MICROELECTRONICS CORP. (TW) 1999-10-26 US disclosed
US-5914519-A Air-gap spacer of a metal-oxide-semiconductor device UNITED MICROELECTRONICS CORP. (TW) 1999-06-22 US disclosed