SCHEMBL2327341

SCHEMBL2327341

COc1cccc[n+]1OC

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 4/20 0.38
CA2 P00918 4/20 0.38
CA7 P43166 3/20 0.38
CA9 Q16790 3/20 0.38
CA4 P22748 2/20 0.38
CA12 O43570 2/20 0.38
CA14 Q9ULX7 2/20 0.38
LTA4H P09960 2/20 0.36
ALDH1A1 P00352 5/20 0.35
MAPK1 P28482 2/20 0.35
KDM4E B2RXH2 2/20 0.35
SMN1; SMN2 Q16637 2/20 0.35
CYP1A2 P05177 3/20 0.34
CYP2A6 P11509 1/20 0.34
HTT P42858 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
ACHE P22303 2/20 0.33
TRPA1 O75762 1/20 0.32
HDAC8 Q9BY41 2/20 0.31
TP53 P04637 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19397154 0.81 KMT2A (0.32) KMT2A
SCHEMBL2358688 0.78 GABRG2 (0.39) CA1CA2CA7CA9CA4
SCHEMBL2325405 0.75
SCHEMBL31547606 0.73
SCHEMBL2791561 0.73
SCHEMBL3441739 0.73
Bromide SCHEMBL9622942 0.73 NPC1 (0.42) CA1CA2CA7CA9CA4
SCHEMBL2329551 0.73
SCHEMBL12276408 0.73
SCHEMBL15028317 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250004378-A1 Pattern Forming Method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-01-02 US disclosed
EP-4474912-A2 PATTERN FORMING METHOD Shin-Etsu Chemical Co., Ltd. (JP) 2024-12-11 EP disclosed
EP-4474911-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-12-11 EP disclosed
CN-119087742-A Pattern forming method 信越化学工业株式会社 2024-12-06 CN disclosed
CN-119087741-A Composition for forming resist underlayer film and pattern forming method 信越化学工业株式会社 2024-12-06 CN disclosed
US-20240402606-A1 Composition For Forming Resist Underlayer Film And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-12-05 US disclosed
US-20240337944-A1 Resist Underlayer Film Material, Pattern Forming Method, And Method Of Forming Resist Underlayer Film SHIN- ETSU CHEMICAL CO., LTD. (JP) 2024-10-10 US disclosed
EP-4425261-A1 RESIST UNDERLAYER FILM MATERIAL, PATTERN FORMING METHOD, AND METHOD OF FORMING RESIST UNDERLAYER FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-09-04 EP disclosed
CN-118584753-A Resist underlayer film material, pattern forming method, and resist underlayer film forming method 信越化学工业株式会社 2024-09-03 CN disclosed
US-20230400770-A1 Resist Underlayer Film Material, Patterning Process, And Method For Forming Resist Underlayer Film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-14 US disclosed
US-20100126386-A1 RADIATION-CURABLE COATING SUBSTANCES BASF AKTIENGESELLSCHAFT (DE) 2010-05-27 US disclosed
WO-2010055050-A1 RADIATION CURABLE COATING MATERIALS BASF SE (DE) 2010-05-20 WO disclosed
US-7598016-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-06 US disclosed
US-20080241736-A1 Immersion lithography; copolymer containing ammonium salt of carboxylic acid and fluorine monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-10-02 US disclosed
US-20080153030-A1 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-06-26 US disclosed
WO-2008058885-A2 RADIATION-HARDENABLE COATING MASSES BASF SE (DE) 2008-05-22 WO disclosed
WO-2007138095-A1 USE OF STABILIZING COMPOSITIONS CONTAINING CYANINE CATIONS IN PACKAGING MATERIALS BASF SE (DE) 2007-12-06 WO disclosed
EP-1820064-A2 RADIATION-CURABLE COATING SUBSTANCES BASF AKTIENGESELLSCHAFT (DE) 2007-08-22 EP disclosed
WO-2006058731-A2 RADIATION-CURABLE COATING SUBSTANCES BASF AKTIENGESELLSCHAFT (DE) 2006-06-08 WO disclosed
US-6110987-A CURED PRODUCTS HAVING AN EXCELLENT APPEARANCE WITHOUT COLORING CAUSED BY POLYMERIZATION INITIATOR SHOWA DENKO K.K. (JP) 2000-08-29 US disclosed