SCHEMBL2328907

SCHEMBL2328907

CC(CC#N)C(=O)ON1CCCCC1

nearest known ligand 0.35

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
CHRM1 P11229 1/20 0.35
CTSK P43235 4/20 0.31
CTSB P07858 3/20 0.31
CTSL P07711 2/20 0.31
CTSH P09668 2/20 0.31
CTSS P25774 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2330176 0.84 MAPT (0.34) CHRM1CTSKCTSBCTSLCTSH
SCHEMBL5874768 0.78 ALDH1A1 (0.32)
SCHEMBL12311403 0.77 EPHX2 (0.34) CHRM1
SCHEMBL11887150 0.74 ALDH1A1 (0.32)
SCHEMBL17488481 0.74 ALDH1A1 (0.33) CHRM1
SCHEMBL8827349 0.73 SLC6A2 (0.35)
SCHEMBL12311413 0.73 EPHX2 (0.34) CHRM1
SCHEMBL7718861 0.72 ALDH1A1 (0.36)
SCHEMBL5074820 0.72 ALDH1A1 (0.31)
SCHEMBL5856414 0.71 DPP7 (0.33)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8808975-B2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2014-08-19 US disclosed
EP-1764647-B1 Use of a positive resist composition for immersion exposure, positive resist composition and immersion lithographic pattern-forming method using the same FUJIFILM CORP (JP) 2011-08-17 EP disclosed
US-20100310991-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-12-09 US disclosed
US-7803511-B2 resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits FUJIFILM CORPORATION (JP) 2010-09-28 US disclosed
US-7273690-B2 Positive resist composition for immersion exposure and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2007-09-25 US disclosed
EP-1764647-A2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM Corporation (JP) 2007-03-21 EP disclosed
US-20070042290-A1 resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
US-20050186505-A1 Positive resist composition for immersion exposure and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2005-08-25 US disclosed